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Wet etching method of barium-strontium titanate and bismuth zinc niobate composite films

A technology of zinc-bismuth niobate and strontium-barium titanate, which is applied in the field of microwave medium processing, can solve difficult problems such as substrate surface precipitation, and achieve the effects of high graphics conversion accuracy, wide application range, and simple equipment

Inactive Publication Date: 2010-04-14
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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Problems solved by technology

[0006] The purpose of the present invention is to solve the problem that the existing wet etching is difficult to solve the substrate surface precipitation, and to invent a wet etching method with good effect, fast speed and no precipitation of strontium barium titanate and zinc bismuth niobate composite film method

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  • Wet etching method of barium-strontium titanate and bismuth zinc niobate composite films

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[0029] The present invention will be further described below with reference to the accompanying drawings and embodiments.

[0030] A manufacturing method of barium strontium titanate (BST) and bismuth zinc niobate (BZN) composite film, the main steps are as follows: firstly prepare HF / HNO according to a certain proportion 3 / CA / H 2 O and HF / HCl / H 2 O etching solution; then the BST+BZN composite thin film samples were etched in two etching solutions respectively. After etching, there must be insoluble reactants remaining on the lower surface substrate and the steps between the lower electrode metal and the substrate. And the film under the photoresist mask will be etched to a certain extent; then the photoresist is removed with acetone / ethanol, and the photoresist mask is re-prepared; then the BST+BZN film sample is etched in HF / HNO 3 / CA / H 2 Perform low-power ultrasonic treatment in O etching solution to remove residual substances; finally remove photoresist with acetone / et...

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Abstract

A processing method of barium-strontium titanate and bismuth zinc niotate composite films is characterized by 1, preparing a photoresist mask graphic on the surface of a BST+BZN composite film sample, 2, preparing etching: A is water solution prepared by nitricacid (HNO3), hydrofluoric acid (HF) and citrate (CA), and B is water prepared by hydrochloric acid (HC1) and hydrofluoric acid (HF), 3, sequentially etching the BST+BZN composite film sample in etching solutions A,B, and determining etching time according to respective thicknesses of BST and BZN, 4, removing a photoresist mask by aid of acetone / alcohol, and preparing the photoresist mask again, 5, performing low-power ultrasonic processing on the BST+BZN composite film sample in the etching A, and 6, utilizing the acetone / alcohol to remove the photoresist mask, cleaning the sample, and drying the sample by nitrogen (N2). Surfaces of positions etched by the processing method do not have residue, and then the processing method is complete in etching and high in graphic transforming precision.

Description

technical field [0001] The present invention relates to a kind of processing method of microwave medium, especially a kind of micro-patterning processing method of barium strontium titanate and zinc bismuth niobate composite film, specifically a kind of barium strontium titanate based on wet chemical etching A processing method of a composite film with zinc and bismuth niobate. Background technique [0002] As we all know, high-performance microwave dielectric materials are the core of dielectric resonators and the key basic materials of modern communication technology. The specific performance requirements mainly include the following two points: high dielectric constant ε and high quality factor Q. Barium strontium titanate (BaO. 5 Sr 0.5 TiO 3 , referred to as BST) film has a high dielectric constant ε, and its dielectric constant can be tuned by an external electric field, zinc bismuth niobate (Bi 1.5 ZnNb 1.5 O 7 , BZN for short) film has relatively lower dielect...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/10C30B29/30C30B29/32
Inventor 李辉孔岑周建军陈辰张斌
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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