Method for reducing stress of cubic boron nitride thin film

Abstract

The invention discloses a preparation method for reducing the stress of a cubic boron nitride thin film, which comprises the following steps: 1, taking a silicon substrate; 2, placing the silicon substrate on an ion beam assisted deposition system, taking a highly-pure boron target as a sputtering target deposited by the cubic boron nitride thin film, and taking a silicon target as a doped source;3, heating the substrate; 4, adopting two independently adjustable Kaufman broad beam ion sources of which a main ion source adopts Ar<+> ions to bombard the boron target and the silicon target, andsimultaneously taking mixed ion beams of Ar<+> and N2<+> as an auxiliary ion source to bombard the substrate so as to deposit and form the cubic boron nitride thin film on the substrate by the ion beam assisted deposition system; 5, cooling the substrate down in the ion beam assisted deposition system; and 6, taking the prepared substrate out, and performing stress parameter testing to finish thepreparation.

Description

technical field [0001] The invention relates to the technical field of superhard film deposition, in particular to a preparation method for reducing the stress of a cubic boron nitride film. Background technique [0002] Cubic boron nitride (c-BN) is a III-V compound semiconductor material with superhardness, wide band gap, high thermal conductivity, high resistivity, high thermal stability and chemical stability. Together with diamond, silicon carbide and gallium nitride, it is called the third-generation semiconductor material after silicon, germanium and gallium arsenide. Among them, c-BN has the best comprehensive performance. It has broad application prospects in high-power electronic devices. At present, people have been able to use a variety of physical vapor deposition (PVD) and chemical vapor deposition (CVD) methods to prepare c-BN thin films. Among the various preparation techniques of c-BN thin films, the bombardment of energetic ions (50-1000eV) is commonly us...

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Problems solved by technology

[0003] Since the late 1980s, various research groups have adopted various means to reduce the internal stress in c-BN films, such as adding transition layers or buffer layers, increasing deposition temperature or post-annealing treatment, reducing the energy of bombarding ions or adopting synthetic Nucleation and growth step-by-step control, and the use of ion radiation, etc., these methods have reduced the internal stress in the c-BN film to a certain extent, and improved the adhesion of the film, but the effect is not very significant

In addition, for the application of c-BN thin films in high temperature, high frequency, high power electronic devices, high temperature annealing, high temperature deposition, ion radiation, buffer layer and other methods are subject to certain restrictions, such as high temperature and ion radiation for the semiconductor device internal There is an important influence between the layers and the contact between the metal and the semiconductor, and the buffer layer directly affects the design of the device structure.

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