Semiconductor device, test mould and test method

Abstract

The embodiment of the invention provides a semiconductor device, a test mould and a test method. The semiconductor device comprises a tube cap, an aluminum alloy anode, a tube core chip, an aluminum alloy cathode, a gate pole and a tube socket orderly stacked; and adjacent layers of components are electrically connected, and the gate pole is electrically connected with the tube core chip. The test method for the semiconductor device comprises the following steps: assembling a tube core chip to be tested, the gate pole component and an aluminum alloy test sheet group into a test fixture, wherein the tube core chip to be tested is sandwiched between the anode and the cathode of the aluminum alloy test sheet group; and performing dynamic testing. The method adopts the aluminum alloy sheet group to replace a rhodium plated molybdenum sheet group in the prior art, not only reduces testing cost, but also reduces turn on voltage drop, improves thermal resistance performance, and improves the combination with the surface of the tube core chip.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device, a test mold, and a test method. Background technique [0002] Fully-controlled power semiconductor devices such as gate turn-off thyristor (GTO) and integrated gate commutated thyristor (IGCT) have the characteristics of silicon rectifier devices, and can work under high voltage and high current conditions, and their switching process can be controlled by Gate control, so it is widely used in power electronic circuits such as controllable rectification, AC voltage regulation, contactless electronic switches, inverters and frequency conversion. [0003] The packaged structure of such fully controlled power semiconductor devices, such as figure 1 As shown, it generally includes a tube cover 11, a metal sheet group as the anode 12, a tube core 13, a metal sheet group as the cathode 14, a gate electrode 15 and a tube base 16, and may also include a tub...

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Problems solved by technology

However, if the test result is unqualified, it will damage both the tested die chip and the rhodium-molybdenum test piece group used for testing. The damage of the tested chip is a natural result of test screening, but the damage of the rhodium-plated molybdenum test piece group increases. reduces the cost of testing such semiconductor devices

Therefore, the use of rhodium-plated molybdenum metal sheet groups in existing semiconductor devices has caused an increase in test costs during dynamic testing, and there is a large on-state voltage drop in existing semiconductor devices using rhodium-plated molybdenum metal sheet groups. shortcoming

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