Method for preparing manganese-stabilized hafnia film
A hafnium oxide, stable technology, applied in the field of preparation of manganese-stabilized hafnium oxide thin film, can solve problems such as second-phase oxides, eliminate the formation of amorphous layer and second-phase oxide, and rapidly prepare Effect
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Embodiment 1
[0016] with HfO 2 and MnO 2 As a raw material, weigh, mix and grind for 2 hours according to the molar ratio of Hf:Mn of 4:1, take it out after constant temperature treatment at 1400°C for 12-24 hours, then carefully grind for 2 hours, mix well, weigh 5g in one portion, A hard steel mold is used on a tablet press to press a pressure of 10 MPa into a disc-shaped sample with a diameter of 20 mm and a thickness of 2 mm. After the sample is placed in a corundum crucible, it is placed in a silicon carbon tube heating element tubular high-temperature furnace, sintered at 1400 ° C in an argon atmosphere for 12-24 hours, and then cooled to room temperature with the furnace to obtain Hf 0.8 mn 0.2 o 2 The hafnium oxide block is stabilized, and the target is made after the block is ground. Then the manganese-stabilized hafnium oxide film was prepared by pulsed laser deposition technology. The laser used in the experiment was the COMPex205 KrF excimer laser produced by Lambda Physik ...
Embodiment 2
[0018] with HfO 2 and MnO 2 As a raw material, weigh, mix and grind for 2 hours according to the molar ratio of Hf:Mn of 4:1, take it out after constant temperature treatment at 1400°C for 12-24 hours, then carefully grind for 2 hours, mix well, weigh 5g in one portion, A hard steel mold is used on a tablet press to press a pressure of 10 MPa into a disc-shaped sample with a diameter of 20 mm and a thickness of 2 mm. After the sample is placed in a corundum crucible, it is placed in a silicon carbon tube heating element tubular high-temperature furnace, sintered at 1400 ° C in an argon atmosphere for 12-24 hours, and then cooled to room temperature with the furnace to obtain Hf 0.8 mn 0.2 o 2 The hafnium oxide block is stabilized, and the target is made after the block is ground. Then the manganese-stabilized hafnium oxide film was prepared by pulsed laser deposition technology. The laser used in the experiment was the COMPex205 KrF excimer laser produced by Lambda Physik ...
Embodiment 3
[0020] with HfO 2 and MnO 2 As a raw material, weigh, mix and grind for 2 hours according to the molar ratio of Hf:Mn of 4:1, take it out after constant temperature treatment at 1400°C for 12-24 hours, then carefully grind for 2 hours, mix well, weigh 5g in one portion, A hard steel mold is used on a tablet press to press a pressure of 10 MPa into a disc-shaped sample with a diameter of 20 mm and a thickness of 2 mm. After the sample is placed in a corundum crucible, it is placed in a silicon carbon tube heating element tubular high-temperature furnace, sintered at 1400 ° C in an argon atmosphere for 12-24 hours, and then cooled to room temperature with the furnace to obtain Hf 0.8 mn 0.2 o 2 The hafnium oxide block is stabilized, and the target is made after the block is ground. Then the manganese-stabilized hafnium oxide film was prepared by pulsed laser deposition technology. The laser used in the experiment was the COMPex205 KrF excimer laser produced by Lambda Physik ...
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