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Manufacturing method of light emitting diode

A technology for light-emitting diodes and manufacturing methods, which is applied to lasers, phonon exciters, laser components, etc., can solve the problems of non-conformity with commercial applications of light-emitting diodes, increase costs, and cumbersome manufacturing processes, so as to improve internal quantum efficiency and reduce The probability of total reflection and the effect of reducing threading dislocations

Inactive Publication Date: 2011-11-30
TEKCORE CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This kind of manufacturing process is more cumbersome and will increase the cost, which is not suitable for the commercial application of light-emitting diodes

Method used

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  • Manufacturing method of light emitting diode
  • Manufacturing method of light emitting diode
  • Manufacturing method of light emitting diode

Examples

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no. 1 example

[0028] Please refer to FIG. 1 to FIG. 5 , which are schematic diagrams of the first embodiment of the present invention. The manufacturing method of the present invention at least includes: first providing a substrate 100, which is one of sapphire, silicon carbide, silicon, gallium arsenide, aluminum nitride and gallium nitride (as shown in FIG. 1 ).

[0029]Then the substrate 100 is placed in a first solution for reaction, so that a high-density nanoscale chemical reaction layer 110 is naturally formed on the surface of the substrate 100 . The substrate 100 is placed in the first solution for 1 second to 200 minutes, and then the chemical reaction layer 110 is used as a mask to selectively etch the substrate 100. Dry etching, wet etching and other methods can be used. Selective etching, one of the mixed methods, forms a plurality of recesses 120 and protrusions 130 with the chemical reaction layer 110 on the surface of the substrate 100 without the chemical reaction layer 110...

no. 2 example

[0041] Please refer to the schematic diagrams of the second embodiment of the present invention shown in FIG. 6 to FIG. 8 . The manufacturing method of this embodiment is based on the first embodiment, but the substrate 100 is subjected to a pretreatment process before being placed in the first solution. The pretreatment process grows a thickness of 1 A passivation layer 300 to 10 μm is formed on the surface of the substrate 100 (as shown in FIG. 6 ). The material of the passivation layer 300 can be one of silicon, silicon nitride, silicon oxide, aluminum oxide, metal, photoresist, benzocyclobutene, polyimide single-layer structure, multi-layer structure and combinations thereof.

[0042] Then place the substrate 100 in the first solution to react, so that a high-density nanoscale chemical reaction layer 110 is naturally formed in the passivation layer 300 on the surface of the substrate 100, and then the passivation layer 300 and the chemical reaction layer 110 is used as ...

no. 3 example

[0045] Please refer to FIG. 9 to FIG. 13 , which are schematic diagrams of the third embodiment of the present invention. The manufacturing method of this embodiment is based on the second embodiment, and the pretreatment process is the same as growing the passivation layer 300 on the surface of the substrate 100 (as shown in FIG. 9 ). Then, the passivation layer 300 is further periodically patterned through a yellow light lithography process to expose a part of the surface of the substrate 100, wherein the periodic pattern of the passivation layer 300 is a periodic pattern of a circle, a polygon and a combination thereof. The width of the pattern is 0.1 micron to 15 microns, and the pitch is 0.1 micron to 15 microns (as shown in Figure 10).

[0046] Then place the substrate 100 in the first solution to react, so that the exposed surface of the substrate 100 naturally forms a high-density nanoscale chemical reaction layer 110 (as shown in FIG. 11 ). Then, using the passivatio...

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Abstract

The invention relates to a light-emitting diode structure and a manufacturing method thereof. The method comprises the steps as follows: firstly, a substrate is placed in a solution for reaction, so as to naturally form a chemical reaction layer on the surface; secondly, the substrate is etched, so that a plurality of concave parts and convex parts above which the chemical reaction layer is positioned are formed on the substrate surface; thirdly, the chemical reaction layer is removed, so as to form an irregular geometrical shape with the concave parts and the convex parts on the substrate surface; and finally, the light-emitting diode structure which improves the external quantum efficiency and the internal quantum efficiency is formed on the epitaxial semiconductor light-emitting structure on the substrate surface.

Description

technical field [0001] The invention relates to a light-emitting diode structure, especially an etching mask naturally formed on a substrate, through selective etching, irregular geometric shapes with different concave and convex surfaces are formed on the surface of the substrate, and the semiconductor layer is changed through the concave and convex surface. Optical waveguide direction, light-emitting diode with enhanced external quantum efficiency and method of manufacturing the same. Background technique [0002] In order to realize solid-state lighting, it is imperative to develop and improve the luminous efficiency of light-emitting diodes. The way to improve the luminous efficiency of the LED can be divided into two parts: one is to improve the internal quantum efficiency of the LED; the other is to increase the light extraction efficiency (light extraction rate) of the LED. [0003] In terms of internal quantum efficiency, improving the quality of epitaxial materials...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01S5/00
Inventor 李家铭林宏诚綦振瀛
Owner TEKCORE CO LTD
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