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Method for enhancing luminous efficiency of nitride-based LED by using metal nanoparticles

A technology based on metal nanoparticles and nitrides, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of limiting external quantum luminous efficiency and the reduction of c-plane light extraction rate, so as to improve luminous efficiency, high repeatability, The effect of simple and easy process

Active Publication Date: 2020-04-17
SONGSHAN LAKE MATERIALS LAB
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

It is a pity that with the increase of Al doping amount, when the emission wavelength enters the deep ultraviolet region (λ<280nm), the emission mode of the device changes from TE to TM, which leads to a significant decrease in the light extraction rate of the c-plane , thus severely limiting the external quantum luminous efficiency, so that the external quantum efficiency of GaN-based deep ultraviolet LED devices is always lower than 10%, far lower than 80% of blue LEDs

Method used

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  • Method for enhancing luminous efficiency of nitride-based LED by using metal nanoparticles
  • Method for enhancing luminous efficiency of nitride-based LED by using metal nanoparticles
  • Method for enhancing luminous efficiency of nitride-based LED by using metal nanoparticles

Examples

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Embodiment 1

[0027] This example provides a method of using metal nanoparticles to enhance the luminous efficiency of nitride-based LEDs. The block copolymer PS-b-P4VP used has a block ratio of 25000:7000, and the assembled Ag has a high degree of order , and the size of the nanoparticles is uniform, specifically, the following steps are included:

[0028] (1) Place the GaN-based LED epitaxial wafer in an acetone solution for ultrasonic cleaning to remove surface organic dirt, take it out and place it in nitrogen to air dry;

[0029] (2) dissolving the PS-b-P4VP block copolymer with a block ratio of 25000:7000 in toluene, an organic solvent, to configure a block copolymer organic solution with a mass fraction of the block copolymer of 0.6%;

[0030] (3) Spin-coat the configured PS-b-P4VP block copolymer solution on the surface of the GaN-based epitaxial wafer with a homogenizer;

[0031] (4) Configure Ag precursor solution AgNO 3 , the solvent is a 1:1 mixed solvent of water and ethanol,...

Embodiment 2

[0035] This example provides a method for using metal nanoparticles to enhance the luminous efficiency of nitride-based LEDs. The block copolymer PS-b-P4VP used has a block ratio of 22000:22000, and the assembled Ag has a high degree of order , and the size of the nanoparticles is uniform, specifically, the following steps are included:

[0036] (1) Place the GaN-based LED epitaxial wafer in an acetone solution for ultrasonic cleaning to remove surface organic dirt, take it out and place it in nitrogen to air dry;

[0037] (2) dissolving the PS-b-P4VP block copolymer with a block ratio of 22000:22000 in toluene, an organic solvent, to configure a block copolymer organic solution with a mass fraction of the block copolymer of 0.5%;

[0038] (3) Spin-coat the configured PS-b-P4VP block copolymer solution on the surface of the GaN-based epitaxial wafer with a homogenizer;

[0039] (4) Configure Ag precursor solution AgNO 3 , the solvent is a mixed solvent of water and ethanol 1...

Embodiment 3

[0043] This example provides a method for using metal nanoparticles to enhance the luminous efficiency of nitride-based LEDs. The block copolymer PS-b-P4VP used has a block ratio of 17000:49000, and the assembled Ag has a high degree of order , and the size of the nanoparticles is uniform, specifically, the following steps are included:

[0044] (1) Place the GaN-based LED epitaxial wafer in an acetone solution for ultrasonic cleaning to remove surface organic dirt, take it out and place it in nitrogen to air dry;

[0045] (2) dissolving the PS-b-P4VP block copolymer with a block ratio of 17000:49000 in toluene, an organic solvent, to configure a block copolymer organic solution with a mass fraction of the block copolymer of 5%;

[0046] (3) Spin-coat the configured PS-b-P4VP block copolymer solution on the surface of the GaN-based epitaxial wafer with a homogenizer;

[0047] (4) Configure Ag precursor solution AgNO3 , the solvent is a 1:1 mixed solvent of water and ethanol, ...

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Abstract

The invention discloses a method for enhancing the luminous efficiency of a nitride-based LED by using metal nanoparticles. The method comprises the following steps: (1) cleaning; (2) preparing a block copolymer organic solution; (3) coating; (4) preparing a precursor solution; (5) soaking; (6) curing. According to the method provided by the invention, the highly ordered metal nanoparticles are self-assembled on the surface of the GaN-based epitaxial thin film by utilizing a PS-b-P4VP block copolymer template method, the self-assembled metal nanoparticles are uniform in size and highly orderedin the arrangement, the plasma elements are generated through the surface ordered metal nanostructures to improve the light extraction rate, the whole enhancement method is simple and feasible in process, high in repeatability and suitable for large-scale industrial operation, subsequent special environments such as acid, alkali and high temperature do not exist, adverse effects on the GaN-basedepitaxial film structure are avoided and the product quality is guaranteed.

Description

technical field [0001] The invention relates to the technical field of LED epitaxial wafers, in particular to a method for enhancing the luminous efficiency of a nitride-based LED by using metal nanoparticles. Background technique [0002] GaN-based epitaxial thin films have been used on a large scale in the field of visible light LEDs, especially for their irreplaceable role in blue light emission, and for this reason they won the 2014 Nobel Prize in Physics. In addition, GaN has a wide band gap (E g ~3.2eV), strong radiation resistance, and strong breakdown resistance make it an important member of the third-generation semiconductors, and has been widely used in the fields of IGBT power devices and laser communications. A few days ago, with the continuous rise of new ultraviolet LEDs, GaN-based epitaxial thin films have shown new vitality. Taking the new ultraviolet LEDs as an example, through the substitutional doping of Ga by Al, the band gap of GaN gradually increases,...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/22
CPCH01L33/0075H01L33/22
Inventor 王新强袁冶康俊杰王琦王维昀王后锦李永德
Owner SONGSHAN LAKE MATERIALS LAB
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