Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Cutting method of super-hard crystal

A cutting method and superhard crystal technology, which are applied to fine working devices, manufacturing tools, stone processing equipment, etc., can solve the problems of small cutting warpage, reduced diamond powder usage, and high cost of superhard crystals. Small warpage, reduced cutting cost, small warpage effect

Inactive Publication Date: 2009-03-18
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
View PDF0 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at the disadvantage of high cost of the existing wire-cut superhard crystal, the invention adopts a new type of cutting mud and a corresponding cutting process to reduce the amount of diamond micropowder used, and cooperates with appropriate cutting parameters to obtain a cutting with small warpage and uniform thickness. chip

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Example 1: Cutting of a 3-inch sapphire crystal

[0019] Using the TRS440 wire cutting machine produced in the United States, using the high-speed reciprocating motion of cutting copper wire and cutting mud to realize the cutting of sapphire crystal with a diameter of 3 inches. Specific steps are as follows:

[0020] ① Adjust the wire cutting machine to be in a horizontal state, install the copper cutting wire on the winding wheel, and then adjust the copper wire on the winding wheel, tensioning wheel and guiding wheel to be on the same plane through the tensioning wheel and the guiding wheel, so that The tension on the copper wire is evenly distributed;

[0021] ②The cutting mud is prepared according to (200 carats of diamond powder + 50 carats of boron carbide or 4:1) / per liter of olive oil;

[0022] ③ Install the sapphire crystal to be cut, adjust the cutting direction of the crystal, stick the crystal on the special base, and then fix the base on the workbench;

...

Embodiment 2

[0026] Example 2: Cutting of a 2-inch sapphire crystal

[0027] The cutting method and specific cutting steps are the same as in Example 1, and the cutting mud is prepared according to (150 carats of diamond micropowder+50 carats of boron carbide that is 3:1) / per liter of olive oil; the wire feeding speed is 25m / min, and the cutting speed is 4.5mm / h. The wafer obtained by dicing has a warpage of less than 30 μm and a thickness unevenness of less than 15 μm.

Embodiment 3

[0028] Example 3: Cutting of 2-inch silicon carbide crystal

[0029] Silicon carbide crystals are slightly harder than sapphire crystals, so it is necessary to increase the proportion of diamond powder in the cutting mud and the wire feeding speed, and reduce the cutting speed. The TRS440 wire cutting machine produced in the United States is used to cut the silicon carbide crystal with a diameter of 2 inches by using the high-speed reciprocating motion of cutting copper wire and cutting mud. Specific steps are as follows:

[0030] ① Adjust the wire cutting machine to be in a horizontal state, install the cutting copper wire on the winding wheel, and then adjust the copper wire on the winding wheel, tensioning wheel and guiding wheel to be on the same plane through the tensioning wheel and the guiding wheel, so that The tension on the copper wire is evenly distributed;

[0031] ②The cutting mud is prepared according to (250 carats of diamond powder + 50 carats of boron carbid...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
warpageaaaaaaaaaa
warpageaaaaaaaaaa
Login to View More

Abstract

The invention relates to a method for cutting superhard crystal, which belongs to the field of crystal processing. The invention adopts a wire-cutting method, prepares cutting slurry by mixing diamond micro-powder, boron carbide and olive oil according to proportion, and realizes the cutting of the superhard crystal by high-speed reciprocating motion of cutting copper wires and cutting slurry. The method can realize continuous cutting of the superhard crystal; comparing the preparation of the cutting slurry with a diamond cutting wire which directly uses the diamond micro-powder or plates diamond particles, the cutting cost is greatly reduced, the wafer angularity received by cutting is small with even thickness, thereby providing convenience for subsequent processing.

Description

technical field [0001] The invention relates to a method for cutting superhard crystals, belonging to the technical field of crystal material processing. Background technique [0002] Superhard crystals represented by sapphire, silicon carbide and magnesium aluminum spinel are the most commonly used substrate materials for third-generation semiconductor materials GaN and ZnO epitaxial thin films, and are widely used in solid-state lighting, microelectronic devices, aerospace and other fields . However, these crystals have high hardness, high growth cost, and difficult processing, so a crystal cutting method with low research and development costs and high efficiency is very necessary. [0003] After growing high-quality crystals, the crystals should be cut into wafers, subjected to rough grinding and polishing to prepare qualified substrates with surface defects, less damage and less roughness, and then epitaxially grow GaN and ZnO films on the surface to prepare High qual...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B28D5/04
Inventor 徐军杨新波李红军苏良碧
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com