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Nano-silicon dioxide abrasive material polishing solution for polishing copper

A technology of nano-silicon dioxide and polishing liquid, which is applied in the field of polishing liquid, can solve the problems of unsatisfactory global planarization, poor planarization effect, low polishing efficiency, etc., achieve ideal safety performance, do not corrode equipment, and increase polishing rate Effect

Inactive Publication Date: 2009-02-18
JIANGSU HAIXUN IND GROUP SHARE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there are problems with the special polishing liquid for copper polishing. First, there are relatively few types. Second, the polishing efficiency is low. Third, the planarization effect is not good, and it cannot meet the requirements of global planarization.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Weigh 30 grams of 10nm water-soluble silica sol, 5 grams of surfactant, 0.2 grams of fatty alcohol polyoxyethylene ether with a degree of polymerization of 20, 3 grams of potassium hydroxide and 61.8 grams of deionized water, and set aside.

[0026] First, 5 grams of silicon dioxide powder is uniformly dissolved in 61.8 grams of deionized water, and then in the environment of a thousand-class clean room, under normal temperature conditions, under 0.1MPa vacuum negative pressure power, the complexing agent aqueous solution is passed through a mass flow meter Put it into the container tank, mix it with the water-soluble silica sol pre-placed in the container tank and stir it well, after mixing evenly, add 0.2 grams of fatty alcohol polyoxyethylene ether (O-20) and 3 grams of potassium hydroxide into the container tank and continue to fully stir, and mix evenly to become the finished polishing solution of the present invention.

[0027] Experimental effect analysis: use th...

Embodiment 2

[0030] Weigh 25 grams of 30nm water-soluble silica sol, 15 grams of 80nm surfactant, 0.3 gram of lauroyl monoethanolamine, 1 gram of tetramethylammonium hydroxide and 58.7 grams of deionized water for later use.

[0031] First, 15 grams of fumed silica powder is uniformly dissolved in 58.7 grams of deionized water, and then in the environment of a thousand-class clean room, under normal temperature conditions, under 0.1Mpa vacuum negative pressure power, the complexing agent is passed through a mass flow meter The aqueous solution is input into the container tank, mixed with 25% water-soluble silica sol pre-placed in the container tank and fully stirred. After mixing evenly, add 0.3 grams of lauroyl monoethanolamine and 1 gram of tetramethylammonium hydroxide into the container tank And continue to stir fully, mix evenly and promptly become the finished product of polishing liquid of the present invention.

[0032] Experimental effect analysis: use the above polishing liquid, ...

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PUM

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Abstract

The invention provides nano-silicon dioxide abrasive polishing solution used for polishing copper, which comprises abrasive, surfactant, complexing agent, oxidizer, pH regulator and de-ionized water; the weight percent of the components is as follows: 10 to 40 percent of abrasive I, 5 to 20 percent of surfactant, 0.01 to 0.6 percent of complexing agent, 1 to 6 percent of pH regulator and the rest is de-ionized water. The pH value of the mixed liquid of the components is 10 to 12. The nano-silicon dioxide abrasive polishing solution can be used for surface polishing of copper quickly, which does not corrode equipment with high safety when being used.

Description

technical field [0001] The invention relates to a polishing liquid, in particular to a nano silicon dioxide abrasive polishing liquid used in copper polishing. Background technique [0002] With the integration of integrated circuits getting higher and higher, aluminum as an interconnection material is increasingly showing its shortcomings, while copper has a bottom resistivity, and the bottom electric mobility is the preferred material to replace aluminum as an interconnection material , and copper interconnects must be globally planarized, and CMP has become a very critical technology in copper interconnects, so it has attracted widespread attention. [0003] In recent years, with the improvement of integrated circuit integration and the rapid development of integrated circuits, it is difficult for the original aluminum as an interconnection line to meet the requirements of this development. Therefore, it is necessary to select new materials to prepare interconnection line...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02
Inventor 仲跻和
Owner JIANGSU HAIXUN IND GROUP SHARE
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