Production method of bulk silicon nano line transistor device

Abstract

The invention discloses a preparation method for a bulk silicon nanometer line transistor apparatus, which belongs to the technical field of manufacturing CMOS GSI (ULSI). The method realizes a bulk silicon nanometer line structure by an approach from up to down; a large amount of heat generated by the apparatus can be radiated from an underlay area by a source drain area, thus effectively restraining the self-heating effect of the apparatus. Besides, as the source drain of the bulk silicon nanometer line transistor apparatus is connected with the underlay, and a large fan-out deep source drain junction can be realized, thus effectively reducing a parasitic resistance and being capable of completely showing the advantages of the characteristics of a silicon nanometer line structure; the technique has high controllability and is compatible with the traditional technique technology. Compared with an SOI (Silicon on Insulator) silicon chip, the technique manufacture cost can be effectively reduced.

Description

technical field [0001] The invention belongs to the field of CMOS ultra-large-scale integrated circuit (ULSI) manufacturing technology, in particular to a method for preparing a field-effect transistor (Metal-Oxide-Silicon Field Effect Transistor, MOSFET). Background technique [0002] In order to continuously reduce costs, increase integration, and improve performance in VLSI, the feature size of CMOS devices has been continuously reduced. However, when the size of the device is reduced to the deep submicron region, the leakage current of the device continues to increase, and the leakage-induced barrier lowering (DIBL) effect and the short channel effect become more and more obvious, which have become the main problems hindering the reduction of the device size. In order to overcome these problems, one of the effective ways is to propose a new device structure to improve the gate control ability of the device, improve the device characteristics, and better adapt to the smal...

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Problems solved by technology

Now, the top-down method is used to realize the silicon nanowire structure, which is mainly realized on the SOI (Siliconon Insulator) silicon wafer. figure 2 Describes the cross-sectional view of the structure of silicon nanowires prepared by this method. From the figure, it can be seen that since the entire device is prepared on a silicon oxide layer, the heat dissipation coefficient of silicon oxide is about one percent of that of silicon, so the device works A large amount of heat generated during the process cannot be dissipated through the substrate, and the self-heating effect is serious, which will intensify carrier scattering, reduce mobility, and reduce the driving current of the device, thereby affecting the characteristics of the circuit and device, and even causing reliability problems of the circuit

On the other hand, silicon nanowires prepared on SOI substrates, since the source and drain regions and channel regions are both nanowire structures, the channel and source and drain composed of cylinders with a diameter of tens of nanometers or even several nanometers region, making the cross-section of the source-drain region small, which will introduce a very large parasitic source-drain series resistance. In small-sized devices, this parasitic resistance will more significantly affect the performance of the device, thereby significantly degrading the driving capability

In addition, the cost of SOI silicon wafers is very high compared with conventional bulk silicon wafers. Therefore, the existing silicon nanowire gate-enclosed device structure realized by the top-down method has a large parasitic series resistance due to obvious self-heating effect. Problems such as this greatly reduce the advantages of this device structure, so the preparation method of this device has not been well resolved, and the complexity of the process, uncontrollability, incompatibility with traditional processes, and high cost will be serious. Influencing the development and realization of such device structures

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