SOI device structure

Abstract

The present invention discloses a semiconductor SOI (Silicon-On-Insulator) high-voltage device structure and manufacturing method thereof which can improve the heat dissipation performance. The SOI device structure with a good heat dissipation performance comprises a material configured to change a high-voltage SOI device field oxide layer so that the heat dissipation performance of the SOI high-voltage device can be effectively improved by employing the difference of thermal conductivities and the dielectric constants of different materials and without change of the device size and change ofthe three-layer structure portions of the SOI.

Description

technical field [0001] The invention relates to the field of semiconductor SOI high-voltage devices, in particular to an SOI device structure with better heat dissipation performance. Background technique [0002] SOI (Silicon-On-Insulator, silicon on insulating substrate) technology introduces a buried oxide layer between the top silicon and the back substrate. By forming a semiconductor thin film on an insulator, the SOI material has the incomparable advantages of bulk silicon: it can realize the dielectric isolation of components in integrated circuits, and completely eliminate the parasitic latch effect in bulk silicon CMOS circuits; The integrated circuit also has the advantages of small parasitic capacitance, high integration density, fast speed, simple process, small short channel effect, and is especially suitable for low-voltage and low-power circuits. Therefore, it can be said that SOI will likely become a deep submicron low-voltage , the mainstream technology of ...

AI Technical Summary

Problems solved by technology

[0003] Since the SOI structure is based on the bulk silicon process, an additional buried oxide layer 11 is added, which greatly reduces the heat dissipated from the substrate. Therefore, most papers and patents discuss how to change the structure and material of the buried layer to achieve It is beneficial to heat dissipation, thus ignoring the improvement of the field oxide layer 12, especially for high-voltage devices, the thickness of the field oxide layer is similar to the thickness of the buried layer, and the thickness of the superimposed oxide layer such as the isolation layer 13 makes the former’s influence on heat dissipation even less. neglect

Images