soi substrate, semiconductor device and method of forming the same

Abstract

The invention discloses a SOI substrate, a semiconductor device and a forming method thereof. The SOI substrate includes: providing a first silicon substrate, the first silicon substrate including a first silicon layer; Providing a second silicon substrate, the second silicon substrate comprising a third silicon layer and an oxide layer, a surface of the oxide layer having grooves penetrating theoxide layer, the grooves being located in an active region, the grooves being filled with a silicon material of a different doping type than the first silicon layer, the third silicon layer being of the same doping type as the first silicon layer; Bonding one surface of the first silicon substrate and an oxide layer surface of the second silicon substrate to form the SOI substrate. The invention suppresses the self-heating effect and floating body effect of the SOI structure, and suppresses the self-heating effect of the SOI structure.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to an SOI substrate, a semiconductor device and a method for forming the same. Background technique [0002] The full name of SOI is Silicon-On-Insulator, that is, silicon on an insulating substrate. This technology introduces an oxide layer between the top silicon layer and the back substrate. Compared with bulk silicon substrates, SOI substrates have the following advantages in device performance: reduced parasitic capacitance, lower power consumption, elimination of latch-up effects, and suppression of substrate pulse current interference. [0003] The performance of SOI is also affected by its own structure. Due to the low thermal conductivity of the oxide layer in the SOI structure, the heat generated by the device cannot be quickly released through the back substrate, and the continuously generated heat quickly accumulates in the active area, resulting in the "...

AI Technical Summary

Problems solved by technology

The floating body effect will not only reduce the gain of the device and lead to unstable operation of the device, but also reduce the leakage breakdown voltage and cause a single-transistor latch-up effect, resulting in a large off-state leakage current and increased power consumption

These will limit the application of the device in the circuit, especially making the compromise design of speed and power consumption more difficult

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