Integration structure and making method of insulator silicon radio frequency integrated circuit

Abstract

An integrated structure for insulator silicon RF IC, which contains an insulated silicon substrate containing monocrystal layer, isolation oxidation layer and silicon thin layer, field oxidation layer formed in silicon thin and connected with isolation oxidation layer by adopting local field oxidation isolation technology for preventing device leakage, grid oxidation layer formed on silicon thin surface, polycrystalline silicon layer deposited on grid oxidation layer, silicon nitride layer formed around the polycrystalline, titanium disilicide thin layer dot distributed on silicon thin layer, first aluminium film formed on titanium disilicide thin layer, a silicon dioxide layer formed on field oxidation layer, polycrystalline layer, silicon nitride layer, titanium disilicide thin layer and first aluminium film, part of first layer of aluminium film inlaid in silicon dioxide layer, second aluminium film partially connected with first aluminium film and formed on silicon dioxide layer.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to an integrated structure on a silicon-on-insulator (SOI) substrate used in the field of radio frequency integrated circuits and a manufacturing method. Background technique [0002] In the past two decades, communication technology has developed at an astonishing speed, and the development of radio frequency wireless communication technology is particularly rapid, showing huge industrial value and market prospects. Compared with the compound semiconductor technology widely used in radio frequency technology, silicon complementary metal-oxide-semiconductor (CMOS) technology has the advantages of mature technology, low cost and easy integration with digital circuits, but the bulk silicon substrate has large loss, Disadvantages such as poor isolation performance and difficulty in integrating passive components with high quality factors; SOI substrates can partially overcome th...

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Problems solved by technology

The compatibility of the process and the balance of performance have become the most important issues in the design. Among them, LDMOS simultaneously obtains a high cut-off frequency (f T ) and source-drain breakdown voltage (BV DS ), inductors on high-loss silicon substrates to obtain a high quality factor (Q), are technical challenges that must be faced; in order to further improve radio frequency performance, gate-source-drain self-aligned silicide should also be realized, which For LDMOS devices, it is also a technical difficulty; in addition, the inherent floating body effect of SOI field effect devices (involving NMOS and LDMOS in the integrated structure) will damage the radio frequency characteristics and must be effectively suppressed

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