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Delectric material of calcium based oxide of modified copper titanate, and application

A copper calcium titanate-based, dielectric material technology, applied in the direction of inorganic insulators, ceramics, etc., can solve the problems of unfavorable practical application, large dielectric loss of CCTO materials, etc., and achieve the reduction of dielectric constant, the reduction of dielectric constant, the increase of Effect of Die Resistance Value

Inactive Publication Date: 2007-10-10
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The invention aims at the problem that the dielectric loss of CCTO materials is very large and unfavorable for practical application, and provides a kind of modified copper calcium titanate-based oxide dielectric materials

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Example 1: Zr element is replaced by Cu, and the chemical expression of the apparent composition is CaCu 2.95 Zr 0.05 Ti 4 o 12 modified CCTO ceramics.

[0029] The specific preparation method is as follows. Analytical purity carbonate CaCO 3 (99.0%), oxide CuO (99.0%), TiO 2 (99.8%) and ZrO 2 (99.8%) as raw materials, ceramic samples were prepared by traditional solid-state reaction process. First, the chemical expression of CaCu in terms of apparent composition 2.95 Zr 0.05 Ti 4 o 12 The metering ratio of weighing and mixing raw materials, after ball milling, drying and briquetting, is pre-calcined at 650°C for 8 hours to make it fully chemically reacted. Crush and ball-mill the calcined block, and make the dried powder into a thin disc with a diameter of 15mm and a thickness of about 1.5mm under the pressure of 180MPa. Finally, the ceramic samples were obtained by sintering for 10 h at the highest temperature of 1050° C. in air.

Embodiment 2

[0030] Example 2: The composition of the modified CCTO ceramics is the same as in Example 1. The specific method is generally as described in Example 1, except that the sintering time during material preparation is 20 h.

Embodiment 3

[0031] Example 3: Cu site substitution of La element, apparent composition chemical expression is CaCu 2.90 La 0.10 / 3 Ti 4 o 12 modified CCTO ceramics. The specific preparation method is as described in Example 1, except that in Example 1, the Cu site substitution element is Zr, and the raw material used is ZrO 2 , while the Cu site substitution element in this embodiment is La, and the raw material used is La 2 o 3 (99.95%), according to the apparent composition chemical expression CaCu 2.90 La 0.10 / 3 Ti 4 o 12 The stoichiometric ratio was batched. The sintering conditions are the same as those in Example 1, both being 10h.

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Abstract

This invention discloses a modified calcium copper titanate-based oxide dielectric material and its application. The chemical formula of the dielectric material is CaCu3-xAyTi4O12, wherein, A is one or more of elements from IIA to IIB groups except for copper; x = 0.005-1.5; y = x when A is bivalent element; y = 2x / 3 when A is trivalent element; y = x / 2 when A is tetravalent element. The modified calcium copper titanate-based oxide dielectric material has such advantages as high dielectric constant, low dielectric loss, and small change of dielectric constant at low-frequency part with frequency and temperature. The modified calcium copper titanate-based oxide dielectric material can be used to fabricate small-scale functional capacitor, resonancer, wave filter and memorizer.

Description

technical field [0001] The invention relates to an oxide dielectric material with copper calcium titanate as a parent phase component and its application, in particular to a modified copper calcium titanate-based oxide dielectric characterized by a large dielectric constant and low dielectric loss Materials and their applications in electronics. technical background [0002] High dielectric oxide materials provide a possible basis for realizing high performance and miniaturization of important electronic devices such as capacitors, resonators, filters, and memories, and thus have received increasing attention. Traditionally, high dielectric oxide materials with a relative permittivity ε' greater than 1000 can be roughly divided into two categories. One type is ferroelectric or ferroelectric relaxor perovskite oxides, such as BaTiO 3 , Pb(Zr,Ti)O 3 , Pb(Mg 1 / 3 Nb 2 / 3 )O 3 Wait. The high dielectric properties of such materials are closely related to the electric field r...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/462H01B3/12
Inventor 邵守福张家良郑鹏
Owner SHANDONG UNIV
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