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Processing method for the semiconductor pipe core assembly crystal surface

A technology of semiconductor tubes and processing methods, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as cumbersome operation, clean removal, breakdown, etc., to eliminate tip discharge, improve electrical performance, and improve stability Effect

Inactive Publication Date: 2008-10-22
江苏佳讯电子有限公司 +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When for the pickling treatment of the surface of the semiconductor die assembly after welding, a large amount of heavy metal ions will be adsorbed on the grain surface of the semiconductor die assembly during the welding process of the crystal grain and the pin, so this cleaning method and The cleaning agent cannot remove the heavy metal ions on the surface of the crystal grain of the semiconductor die assembly with a simple method and low cost
However, semiconductor diodes are greatly affected by temperature when they work. The reverse current IR of semiconductor diodes made by the current cleaning method can only be controlled at about 5μA. The reverse cut-off performance of semiconductor diodes is unstable and is easily broken down by reverse voltage. , lose the one-way conduction effect, so the quality of the semiconductor diode cannot be further improved
In addition, with the current cleaning method, the semiconductor die assembly uses different cleaning tanks in different cleaning stages, so the semiconductor die assembly needs to be loaded and unloaded by a special mechanism, which is not only cumbersome to operate, but also increases auxiliary production. time

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0011] The method for processing the crystal grain surface of the semiconductor die assembly of the present invention, (1), the semiconductor die assembly to be cleaned is inserted in the cleaning tank, and the corrosive agent is poured into the cleaning tank, and the corrosive agent is analytical grade or superior Grade pure 20%-30% nitric acid, 20%-30% hydrofluoric acid, 8%-15% sulfuric acid and 30%-40% glacial acetic acid mixed solution, the time is controlled within 1-10min, and the cleaning tank is tilted In addition to the corrosive agent, spray the surface of the semiconductor die assembly with high-pressure deionized water, and quickly rinse the surface of the semiconductor die assembly obliquely. (2) The cleaning tank enters the next station and resets. Pour the pre-cleaning agent into the cleaning tank. The pre-cleaning agent is analytical grade or pure 15% to 35% phosphoric acid, 15% to 35% hydrogen peroxide And a 40%-60% deionized water mixed solution, while removi...

Embodiment 2

[0013] The method for processing the crystal grain surface of the semiconductor die assembly of the present invention, (1), the semiconductor die assembly to be cleaned is inserted in the cleaning tank, and the corrosive agent is poured into the cleaning tank, and the corrosive agent is analytical grade or superior Grade pure 23%-28% nitric acid, 23%-28% hydrofluoric acid, 10%-12% sulfuric acid and 32%-38% glacial acetic acid mixed solution, the time is controlled at 5-10min, and the cleaning tank is tilted In addition to the corrosive agent, spray the surface of the semiconductor die assembly with high-pressure deionized water, and quickly rinse the surface of the semiconductor die assembly obliquely. (2) The cleaning tank enters the next station and resets. Pour the pre-cleaning agent into the cleaning tank. The pre-cleaning agent is analytical grade or pure 20% to 30% phosphoric acid, 20% to 30% hydrogen peroxide And 40% to 50% deionized water mixed solution, while removing...

Embodiment 3

[0015]The method for processing the crystal grain surface of the semiconductor die assembly of the present invention, (1), the semiconductor die assembly to be cleaned is inserted in the cleaning tank, and the corrosive agent is poured into the cleaning tank, and the corrosive agent is analytical grade or superior Grade pure 20%-25% nitric acid, 20%-25% hydrofluoric acid, 10%-15% sulfuric acid and 35%-40% glacial acetic acid mixed solution, the time is controlled at 3-8min, and the cleaning tank is tilted In addition to the corrosive agent, spray the surface of the semiconductor die assembly with high-pressure deionized water, and quickly rinse the surface of the semiconductor die assembly obliquely. (2) The cleaning tank enters the next station and resets. Pour the pre-cleaning agent into the cleaning tank. The pre-cleaning agent is analytical grade or pure 20% to 30% phosphoric acid, 20% to 30% hydrogen peroxide And 40% to 60% deionized water mixed solution, while removing m...

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PUM

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Abstract

The related process method for grain surface in semiconductor die assembly comprises: inserting the target assembly into the cleaning tank, pouring corrosive agent into tank to remove the organic sewage on objective surface in 1-10min; inclining the tank to pour out the agent and fast clean the objective with deionized water; in turn, pouring the first cleaning agent into the tank to remove the metal ion and organic and form oxidation layer in 1-5min, then pouring out the agent and cleaning fast with deionized water; pouring the second cleaning agent in tank to remove heavy metal ion and organic in 1-5min, then pouring out the agent and cleaning fast with deionized water; finally, using ultrasonic wave to clean and dry the objective. This invention is low cost and benefit to improve semidiode performance.

Description

technical field [0001] The invention relates to a processing method for semiconductor diodes, in particular to a processing method for the crystal grain surface of a semiconductor die assembly. Background technique [0002] Semiconductor diodes, as small discrete components, have multiple functions such as rectification, detection, limiting and protection, and are widely used in various circuits. Conventional semiconductor diodes first cut the ingot into wafers, and then cut the wafers into grains. The two ends of the grains are respectively welded with copper leads by tin solder to form a semiconductor die assembly. After pickling, gluing, injection molding, Electroplating, directing, printing, testing and packaging complete the production of semiconductor diodes. In the manufacturing process of the semiconductor diode, whether the semiconductor die assembly is cleaned or not directly affects the performance of the semiconductor diode. The conventional cleaning process is...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00
Inventor 吕全亚张心波张国荣
Owner 江苏佳讯电子有限公司
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