36results about How to "High forward and reverse current ratio" patented technology

The invention relates to a discrete double-rectangle gate-controlled U-shaped channel source-drain double tunnelling transistor and a manufacturing method thereof. The transistor has the rectangular gate electrode structure characteristic capable of making two sides of a source and a drain of the transistor generate the tunnelling effect at the same time and the bilaterally symmetric structure characteristic capable of achieving source-drain interchangeable two-way conduction, and a rectangular gate electrode forms three-side wrapping on vertical parts at two sides of a monocrystalline siliconfilm, so that the transistor provided by the invention has relatively high gate-controlled ability, can achieve the low subthreshold swing characteristic, and has the barrier control gate structure characteristic capable of preventing a majority carrier of a source-drain doped region from flowing through the transistor. Compared with ordinary MOSFETs, the discrete double-rectangle gate-controlledU-shaped channel source-drain double tunnelling transistor has the advantage that more excellent switching characteristic is achieved by using the tunnelling effect; and compared with an ordinary tunnelling field effect transistor, the discrete double-rectangle gate-controlled U-shaped channel source-drain double tunnelling transistor has the source-drain symmetric interchangeable two-way switching characteristic that the ordinary tunnelling field effect transistor does not have, therefore, the discrete double-rectangle gate-controlled U-shaped channel source-drain double tunnelling transistor is suitable for promotion and application.

The invention relates to a source-drain resistive random bidirectional switching field effect transistor and a manufacturing method thereof. The device has the structural characteristic of bilateral symmetry, and a metal source-drain interchangeable region is controlled to act as a source region or a drain region by adjusting the source-drain interchangeable electrode voltage so as to change the direction of schottky barrier tunneling current. The device has the advantages of low static power consumption reverse leakage current and low sub-threshold swing and can realize the bidirectional switching function. Compared with the common MOSFETs type device, the intensity of the schottky barrier tunneling effect is controlled by using the gate electrode to change the resistance value of the source region and the drain region so as to realize the better switching characteristic; compared with the tunneling field effect transistor, the bidirectional switching field effect transistor has the source-drain interchangeable bidirectional symmetrical switching characteristic which is not possessed by the common tunneling field effect transistor and higher forward conduction characteristic; andcompared with the common schottky barrier transistor, the bidirectional switching field effect transistor has the advantages of high technology implementation and better reverse switching characteristic so as to be suitable for popularization and application.

The invention relates to a dual-conductive type discrete dual-rectangular grid-controlled source-drain variable resistance transistor and a manufacturing method thereof. The transistor has a functionthat a P conductive type and an N conductive type can be freely switched and a bidirectional switch function, has the advantages of low static power consumption, low reverse leakage current, relatively high grid control capability and low sub-threshold amplitude and has the characteristics of a dual-rectangular grid discrete control structure. Compared with a conventional MOSFETs device, the transistor has the advantages that more excellent sub-threshold characteristic and switch characteristic are achieved by a Schottky barrier tunneling effect, and the static power consumption of the transistor is reduced; and compared with a conventional tunneling field-effect transistor, the transistor has the bidirectional switch characteristic which a source and a drain are symmetric and can be changed with each other and which are not possessed by the conventional tunneling field-effect transistor, the function that the P conductive type and the N conductive type can be freely switched and whichcannot be achieved by various existing transistor technologies are achieved, thus, a wider and versatile logic function is provided for an integrated circuit design unit, and the transistor is suitable for promotion and application.

The invention relates to a double-bracket-shaped gate-controlled bidirectional switching tunneling transistor and a manufacturing method thereof. The transistor has a bracket gate and a left-right symmetric structural feature; the gate control capability is high; and a second type of impurity-heavily-doped source-drain exchangeable region is controlled to be as a source region or a drain region byadjusting a source-drain exchangeable electrode voltage and the tunneling current direction is changed. The transistor has advantages of low static power consumption, reverse leakage current, high gate control capability, low sub-threshold swing, and bi-directional switching. Compared with the ordinary MOSFETs type device, the transistor has the improved switching characteristic by using the tunneling effect; and compared with the common tunneling field-effect transistor, the transistor has the good bidirectional symmetric switching characteristic with the source / drain exchanging, wherein thecommon tunneling field-effect transistor does not have the characteristic. Therefore, the bidirectional switching tunneling transistor is suitable for promotion widely.

The invention provides an inverted T-shaped tunneling field effect transistor. A substrate insulating layer of an SOI wafer is arranged above a silicon substrate of the SOI wafer; a heavily-doped source region, two monocrystalline silicon thin films and two heavily-doped drain regions are arranged above the substrate insulating layer of the SOI wafer; gate insulating layers are arranged on the twosides of the L shape of the two monocrystalline silicon thin films respectively; the two sides of each gate insulating layer are provided with insulating medium barrier layers respectively; gates arearranged on the two sides of each gate insulating layer, and above the insulating medium barrier layers; the two gates are positioned on the insulating medium barrier layers on the two sides respectively and are in contact with the gate insulating layers on the two sides respectively; gate electrodes are located above the gates; source electrodes are located above the heavily-doped source region;and drain electrodes are located above the heavily-doped drain regions. The inverted T-shaped tunneling field effect transistor has good gate control capability, and has excellent sub-threshold characteristics and forward conduction capability, so that a device has good low reverse leakage current and static power consumption while the forward characteristics are ensured.

The invention relates to an inverted U gate auxiliary control double-side gate main control bidirectional tunneling transistor and a manufacturing method thereof. The device is provided with an inverted U gate, a double-side gate and a structure characteristic of bilateral symmetry, a heavily-doped source drain interchangeable region can controlled as a source region or a drain region by adjustingthe voltage of a source drain interchangeable electrode, and the tunneling current direction is changed. The device has the advantages of bilateral switch function, low static power consumption, reverse quiescent dissipation and low subthreshold amplitude. Compared with an ordinary MOSFETs type device, a preferable switching characteristic is realized by using a tunneling effect; and compared with an ordinary tunneling filed effect transistor, the transistor has a source drain symmetrical interchangeable bidirectionally switching characteristic that the ordinary tunneling filed effect transistor does not own, so that the transistor is applicable for popularization and application.

The invention relates to a barrier control type H-shaped grid-controlled two-way tunneling transistor and a manufacturing method thereof. The barrier control type H-shaped grid-controlled two-way tunneling transistor provided by the invention comprises an H-shaped grid electrode, a barrier adjusting grid and a bilaterally symmetric structure. The tunneling transistor is strong in grid control capability and a metal source / drain interchangeable region can be controlled as a source region or a drain region through adjusting the electrode voltage of the source / drain interchangeable region. In this way, the direction of the tunneling current is changed. The invention has the advantages of low static power consumption, reverse leakage current, strong grid control capability, low sub-threshold swing and bidirectional switching function. Compared with a common MOSFET type device, more excellent switching characteristics are achieved through the tunneling effect. Compared with a common tunneling field effect transistor, source / drain interchangeable bidirectional symmetrical switching characteristics, which cannot be realized by the common tunneling field effect transistor, can be realizedby the above tunneling transistor. Therefore, the tunneling transistor is suitable for popularization and application.

The invention relates to an H-shaped gate-controlled drain-source resistance-variable conductivity type adjustable transistor and a manufacturing method thereof. The transistor comprises an H-shaped gate electrode, a conductivity type regulation and control gate and a left-right symmetric structure characteristic. According to the invention, the free switching function between a P type conductivity type and an N type conductivity type, and the bidirectional switching function are realized. The advantages of low static power consumption, low reverse leakage current, strong gate control capability and low subthreshold swing are realized. Compared with a common MOSFET type device, the schottky barrier tunneling effect is utilized to achieve better subthreshold characteristics and switching characteristics. The static power consumption of the transistor is reduced. Compared with a common tunneling field effect transistor, the bidirectional switching characteristics, wherein a drain electrode and a source electrode are symmetrical and interchangeable, can be realized, wherein the bidirectional switching characteristics cannot be realized by the common tunneling field effect transistor.The free regulation and control function of the P type conductivity type and the N type conductivity type, which cannot be realized by various existing transistor technologies, can be realized. Therefore, the H-shaped gate-controlled drain-source resistance-variable conductivity type adjustable transistor is suitable for popularization and application.