Double-bracket-shaped gate-controlled bidirectional switch tunneling transistor and manufacturing method thereof

Abstract

The invention relates to a double-bracket-shaped gate-controlled bidirectional switching tunneling transistor and a manufacturing method thereof. The transistor has a bracket gate and a left-right symmetric structural feature; the gate control capability is high; and a second type of impurity-heavily-doped source-drain exchangeable region is controlled to be as a source region or a drain region byadjusting a source-drain exchangeable electrode voltage and the tunneling current direction is changed. The transistor has advantages of low static power consumption, reverse leakage current, high gate control capability, low sub-threshold swing, and bi-directional switching. Compared with the ordinary MOSFETs type device, the transistor has the improved switching characteristic by using the tunneling effect; and compared with the common tunneling field-effect transistor, the transistor has the good bidirectional symmetric switching characteristic with the source / drain exchanging, wherein thecommon tunneling field-effect transistor does not have the characteristic. Therefore, the bidirectional switching tunneling transistor is suitable for promotion widely.

Description

technical field [0001] The invention relates to the field of ultra-large-scale integrated circuit manufacturing, in particular to a double-bracket-shaped gate-controlled bidirectional switch tunneling transistor with low leakage current suitable for low-power integrated circuit manufacturing and a manufacturing method thereof. Background technique [0002] According to the requirements of Moore's law, the basic unit MOSFETs of integrated circuits will become smaller and smaller in size, which will not only increase the difficulty of the manufacturing process, but also cause various adverse effects to become more prominent. Due to the limitations of the physical mechanism of current generation in the MOSFETs used in IC design today, the subthreshold swing cannot be lower than 60mV / dec. When the ordinary tunneling field effect transistor is used as a switching device, the tunneling effect of carriers between the semiconductor energy bands is used as the conduction mechanism of...

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Problems solved by technology

[0004] In order to effectively combine and utilize the advantages of interchangeable source and drain of MOSFETs type devices and the low subthreshold swing swing of ordinary tunneling field effect transistors, solve the problem that the subthreshold swing of MOSFETs type devices cannot be reduced and ordinary tunneling field effect transistors Can only be used as a one-way switch, the present invention proposes a double-bracket-shaped gate-controlled bidirectional switch tunneling transistor and its manufacturing method

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