Bidirectional tunneling transistor controlled by inverted u-gate assisted by double-sided gate and its manufacturing method

Abstract

The invention relates to an inverted U gate auxiliary control double-side gate main control bidirectional tunneling transistor and a manufacturing method thereof. The device is provided with an inverted U gate, a double-side gate and a structure characteristic of bilateral symmetry, a heavily-doped source drain interchangeable region can controlled as a source region or a drain region by adjustingthe voltage of a source drain interchangeable electrode, and the tunneling current direction is changed. The device has the advantages of bilateral switch function, low static power consumption, reverse quiescent dissipation and low subthreshold amplitude. Compared with an ordinary MOSFETs type device, a preferable switching characteristic is realized by using a tunneling effect; and compared with an ordinary tunneling filed effect transistor, the transistor has a source drain symmetrical interchangeable bidirectionally switching characteristic that the ordinary tunneling filed effect transistor does not own, so that the transistor is applicable for popularization and application.

Description

Technical field [0001] The invention relates to the field of ultra-large-scale integrated circuit manufacturing, in particular to an inverted U-gate auxiliary control double-side gate master bidirectional tunneling transistor suitable for low-power consumption integrated circuit manufacturing and a manufacturing method thereof. Background technique [0002] According to the requirements of Moore's Law, the basic unit MOSFETs of integrated circuits will become smaller and smaller in size. What follows is not only the difficulty of the manufacturing process, but also the more prominent various adverse effects. Nowadays, MOSFETs used in integrated circuit design are limited by the physical mechanism of their own current generation during operation, and their sub-threshold swing cannot be lower than 60mV / dec. When the ordinary tunneling field effect transistor is used as a switching device, the tunneling effect of carriers between the semiconductor energy bands is used as the current...

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Problems solved by technology

[0004] In order to effectively combine and utilize the advantages of interchangeable source and drain of MOSFETs type devices and the low subthreshold swing of ordinary tunneling field effect transistors, solve the problem that the subthreshold swing of MOSFETs type devices cannot be reduced and ordinary tunneling field effect transistors It can only be used as a one-way switch. The present invention proposes an inverted U gate auxiliary control double-side gate main control bidirectional tunneling transistor structure and its manufacturing method

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