Inverted U gate auxiliary control double-side gate main control bidirectional tunneling transistor and manufacturing method thereof

Abstract

The invention relates to an inverted U gate auxiliary control double-side gate main control bidirectional tunneling transistor and a manufacturing method thereof. The device is provided with an inverted U gate, a double-side gate and a structure characteristic of bilateral symmetry, a heavily-doped source drain interchangeable region can controlled as a source region or a drain region by adjustingthe voltage of a source drain interchangeable electrode, and the tunneling current direction is changed. The device has the advantages of bilateral switch function, low static power consumption, reverse quiescent dissipation and low subthreshold amplitude. Compared with an ordinary MOSFETs type device, a preferable switching characteristic is realized by using a tunneling effect; and compared with an ordinary tunneling filed effect transistor, the transistor has a source drain symmetrical interchangeable bidirectionally switching characteristic that the ordinary tunneling filed effect transistor does not own, so that the transistor is applicable for popularization and application.

Description

technical field [0001] The invention relates to the field of ultra-large-scale integrated circuit manufacturing, in particular to an inverted U-gate assisted-control dual-side gate-master-controlled bidirectional tunneling transistor and a manufacturing method thereof, which are suitable for low-power integrated circuit manufacturing. Background technique [0002] According to the requirements of Moore's law, the basic unit MOSFETs of integrated circuits will become smaller and smaller in size, which will not only increase the difficulty of the manufacturing process, but also cause various adverse effects to become more prominent. Due to the limitations of the physical mechanism of current generation in the MOSFETs used in IC design today, the subthreshold swing cannot be lower than 60mV / dec. When the ordinary tunneling field effect transistor is used as a switching device, the tunneling effect of carriers between the semiconductor energy bands is used as the conduction mech...

AI Technical Summary

Problems solved by technology

[0004] In order to effectively combine and utilize the advantages of interchangeable source and drain of MOSFETs type devices and the low subthreshold swing of ordinary tunneling field effect transistors, solve the problem that the subthreshold swing of MOSFETs type devices ca

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