Source-drain symmetrical interchangeable double-bracket gated tunneling transistor and method of making the same

Abstract

The invention relates to a source-drain symmetric and interchangeable double-bracket-shaped grid-controlled tunneling transistor and a manufacturing method thereof. The source-drain symmetric and interchangeable double-bracket-shaped grid-controlled tunneling transistor is provided with a folding auxiliary grid, a double-bracket grid and structural features which are symmetric on the left side andthe right side. The source-drain symmetric and interchangeable double-bracket-shaped gate-controlled tunneling transistor is strong in grid control capability, and a voltage-controlled heavily-dopedsource-drain interchangeable region of a source-drain interchangeable electrode can be adjusted to be a source region or a drain region. In this way, the direction of the tunneling current is changed.According to the invention, the advantages of bidirectional switch function, low static power consumption, low reverse leakage current, relatively strong grid control capability, low sub-threshold amplitude swing and the like are realized. Compared with a common MOSFET type device, more excellent switching characteristics are achieved through the tunneling effect. Compared with a common tunnelingfield effect transistor, source-drain symmetric and interchangeable two-way switch characteristics, which cannot be realized by the common tunneling field effect transistor, can be realized by the source-drain symmetric and interchangeable double-bracket-shaped grid-controlled tunneling transistor. Therefore, the source-drain symmetric and interchangeable double-bracket-shaped grid-controlled tunneling transistor is suitable for popularization and application.

Description

technical field [0001] The invention relates to the field of ultra-large-scale integrated circuit manufacturing, in particular to a source-drain symmetrical interchangeable double-bracket-shaped gate-controlled tunneling transistor suitable for low-power integrated circuit manufacturing and a manufacturing method thereof. Background technique [0002] According to the requirements of Moore's law, the basic unit MOSFETs of integrated circuits will become smaller and smaller in size, which will not only increase the difficulty of the manufacturing process, but also cause various adverse effects to become more prominent. Due to the limitations of the physical mechanism of current generation in the MOSFETs used in IC design today, the subthreshold swing cannot be lower than 60mV / dec. When the ordinary tunneling field effect transistor is used as a switching device, the tunneling effect of carriers between the semiconductor energy bands is used as the conduction mechanism of the ...

AI Technical Summary

Problems solved by technology

[0004] In order to effectively combine and utilize the advantages of interchangeable source and drain of MOSFETs type devices and the low subthreshold swing swing of ordinary tunneling field effect transistors, solve the problem that the subthreshold swing of MOSFETs type devices cannot be reduced and ordinary tunneling field effect transistors Can only be used as a one-way switch, the present invention proposes a source-drain symmetrical interchangeable double-bracket-shaped gate-controlled tunneling transistor structure and its manufacturing method

Images