Semiconductor laser device and method for manufacturing the same semiconductor laser device

Abstract

A current blocking structure of a semiconductor laser includes a p-type InP buried layer, an n-type InP current blocking layer, and a p-type InP current blocking layer laminated along the mesa side surface of a ridge. In the structure, an upper end part of the n-type InP current blocking layer is covered with the p-type InP buried layer and the p-type InP current blocking layer. The n-type InP current blocking layer is prevented from contacting n-type and p-type InP cladding layers. Creation of an ineffective current path from one of the n-type InP cladding layers through the n-type InP current blocking layer to a p-type InP cladding layer of the semiconductor laser is prevented.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to a semiconductor laser device and method for manufacturing the same, and more specifically to a buried semiconductor laser device and method for manufacturing the same. [0003] 2. Background Art [0004] With the expansion of optical fiber communications network in recent years, demands for semiconductor laser devices that enable high-speed operation at high temperatures have been increasing. As a product to realize such demands, a semiconductor laser device using an AlGaInAs-based material for an active layer is attracting attention. [0005] Since Al-containing semiconductor materials are easily oxidized, oxides of Al are easily formed in such semiconductor materials. If electric current is injected into the active layer of such a semiconductor laser, the defects formed by the oxides of Al create non radiative recombination centers to deteriorate the device. Therefore, a semiconductor la...

AI Technical Summary

Benefits of technology

[0014] In order to solve the above-described problems, it is an object of the present invention to provide a semiconductor laser device and a method for manufacturing the same using an AlGaInAs-based material wherein the deterioration of the device due to the oxidation of an active layer on a mesa side surface is prevented, and the lowering of current injection efficiency by an ineffective current path that does not pass through a active layer is suppressed.

[0017] According to the present invention, in a semiconductor laser device using an AlGaInAs-based material and a method for manufacturing such a semiconductor laser device, the deterioration of the device due to the oxidation of an active layer on a mesa side surface can be prevented. The lowering of current injection efficiency by an ineffective current path that does not pass through an active layer can also be suppressed.

Problems solved by technology

If electric current is injected into the active layer of such a semiconductor laser, the defects formed by the oxides of Al create non radiative recombination centers to deteriorate the device.

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