Method for preparing gallium nitride nano crystal using sol-gel method

Abstract

The sol-gel process of preparing nanometer gallium nitride crystal includes the first sol-gel process to prepare gallium oxide-amorphous carbon mixture through dissolving gallium nitrate in concentrated nitric acid, dropping concentrated ammonia water to regulate pH value, heating the solution, adding citric acid, stirring for 2 hr to obtain transparent gel, and drying the gel at high temperature in a muffle; and the subsequent preparation of nanometer gallium nitride crystal inside one tubular vacuum furnace through setting the gallium oxide-amorphous carbon mixture into a ceramic tube, exhausting air and filling with nitrogen, maintaining at 850-950 deg.C for 1 hr, and introducing argon to cool. The prepared nanometer gallium nitride crystal has hexagonal structure, average particle size of 10-11 nm and homogeneous particle size, and may be used in preparing high quality one-dimensional gallium nitride material or as composite gallium nitride quantum dot material directly.

Description

(1) Technical field [0001] The invention relates to a method for preparing gallium nitride nanocrystals, in particular to a method for preparing gallium nitride nanocrystals by a sol-gel method. (2) Background technology [0002] GaN crystal, as room temperature direct wide band gap compound semiconductor material (band gap is 3.4eV), with its excellent properties such as low compressibility and high thermal conductivity, makes it suitable for high temperature, high energy devices and short wavelength optical devices Has a wide range of applications. Since its discovery in the 1930s, it has been a hotspot of extensive research in the fields of physics and chemistry. At present, the main uses of gallium nitride crystals are: 1. Directly used as gallium nitride quantum dot composite materials; 2. The raw material for preparing bulk gallium nitride by vaporization and condensation; 3. Preparation of high-quality one-dimensional gallium nitride. For direct use as gallium nitri...

AI Technical Summary

Problems solved by technology

Since the preparation of nanomaterials with uniform particle size usually adopts the method of rapid nucleation and rapid termination, but for gallium nitride, the higher synthesis temperature, the synthesis temperature and the decomposition temperature are closer and the stronger ionic bond characteristics make all The expected preparation of similar II-VI quantum dots is completely impossible

At present, only the single-molecule gallium azide explosion method and the thermal decomposition method of organic gallium nitride compounds can produce products that meet the requirements of quantum dots, but there are still many problems, such as low yield, complicated preparation methods, and poor safety of intermediate products.