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Semiconductor device and manufacturing method of the same

一种制造方法、半导体的技术，应用在半导体/固态器件制造、半导体器件、半导体/固态器件零部件等方向，能够解决高电压等问题，达到减小蚀刻量、减少不良定向、防止变薄的效果

Inactive Publication Date: 2007-01-31
FUJITSU SEMICON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the disadvantage of flash memory is that tunnel current needs to flow through the gate insulating film when writing or erasing information, which requires a relatively high voltage

Method used

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  • Semiconductor device and manufacturing method of the same
  • Semiconductor device and manufacturing method of the same
  • Semiconductor device and manufacturing method of the same

Examples

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no. 1 example

[0097] Figure 9-Figure 18 is a cross-sectional view of the semiconductor device in production according to the first embodiment of the present invention. Note that in these figures, the same reference numerals Figure 1-Figure 8 The components are the same as those in , and a detailed description thereof is subsequently omitted.

[0098] This semiconductor device is a stacked FeRAM, and is manufactured as follows.

[0099] First, execute in the manner described in "Preliminary Instructions" figure 1 Steps of (a) and (b). Next, if Figure 9 As shown in (a), the photoresist coated on the first insulating film 11 is exposed and developed to form a second resist pattern 30 .

[0100] As shown in the figure, hole-shaped first and second windows 30a, 30b are respectively formed in the second resist pattern 30 directly above the first and second source / drain regions 8a, 8b.

[0101] Subsequently, if Figure 9 As shown in (b), for example, a high-frequency current with a frequ...

no. 2 example

[0174] In the above first embodiment, if Figure 11 As shown in (b) and (c), the auxiliary conductive plug 36 a is composed of a laminated film of the second barrier metal film 35 and the conductive film 36 . In contrast, in the present embodiment, the auxiliary conductive plug 36 a is composed of the conductive film 36 only.

[0175] Figure 19 (a)- Figure 19 (c) is a cross-sectional view of a semiconductor device in production according to a second embodiment of the present invention. Note that in these figures, the same components as those described in the first embodiment are denoted by the same reference numerals, and a detailed description thereof is subsequently omitted.

[0176] In order to manufacture the semiconductor device according to the present embodiment, the method described in the first embodiment is carried out Figure 9 (a)- Figure 11 Steps shown in (a).

[0177] Subsequently, if Figure 19 As shown in (a), a single-layer conductive film 36 is form...

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Abstract

To provide a semiconductor device capable of improving accuracy in finishing a hole in which a conductive plug right under a capacitor, and a manufacturing method of such a semiconductor device comprising the following steps: a step of forming first and second conductive plugs 32 a , 32 b in first and second holes 11 a , 11 b in a first insulating film 11; a step of forming a first opening 14 a in an oxidation preventing insulating film 14 ; a step of forming an auxiliary conductive plug 36 a in the first opening 14 a; a step of forming a capacitor Q on the auxiliary conductive plug 36 a; a step of forming third and fourth holes 41 a , 41 b in a second insulating film 41 covering the capacitor Q; a step of forming the second opening 14 b in the oxidation preventing insulating film 14 under the fourth hole 41 b; a step of forming a third conductive plug 47 a in the third hole 41 a; and a step of forming a fourth conductive plug 47 b in the third hole 41 a.

Description

[0001] References to related applications [0002] This application is based on and claims the benefit of priority from Japanese Priority Patent Application No. 2005-221010 filed on July 29, 2005, the entire contents of which are hereby incorporated by reference. technical field [0003] The invention relates to a semiconductor device and a manufacturing method thereof. Background technique [0004] Flash memory and ferroelectric memory are known non-volatile memories that retain information even when power is removed. [0005] Flash memory among these two types of memory has a floating gate embedded in the gate insulating film of an insulated gate field effect transistor (IGFET), and this type of memory stores information by accumulating electric charge representing information and storing it in the floating gate . However, flash memory has a disadvantage in that a tunnel current needs to flow through a gate insulating film when writing or erasing information, which requi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/105H01L21/8239
CPCH01L27/11509H01L28/57H01L27/11507H01L27/11502H01L21/76832H01L21/7684H01L23/544H01L21/76834H01L2223/5446H01L27/105H01L21/76849H01L28/65H01L2924/0002H01L21/76816H10B53/30H10B53/00H10B53/40H01L2924/00
Inventor 伊藤昭男佐次田直也
Owner FUJITSU SEMICON LTD
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