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Super-fast wide-wave-band optical detector made by by doped oxide and silicon heterojunction material

A technology of silicon heterojunction and photodetector, which is applied in the field of high-sensitivity and anti-radiation photodetector, ultra-fast response, and wide frequency band, which can solve the problem of insufficient light response speed, insufficient sensitivity, and easy damage of the detector core and other issues, to achieve the effect of ultra-fast photoresponse, strong radiation resistance, and small capacitance

Inactive Publication Date: 2007-01-10
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The object of the present invention is to overcome the shortcomings of the above-mentioned detectors, such as the light response speed is not fast enough, the sensitivity is not high enough, and the detector core is easily damaged, and provides a detector chip made of doped oxide and silicon heterojunction materials, Or connect one or N detector chips in series, the detected light is incident from the side of the detector chip, and a voltage signal is generated directly after the light is irradiated, and ultra-fast, high-sensitivity and radiation-resistant light detection without any auxiliary power supply and electronic circuit The photodetector can detect the energy, power and waveform of light, and its response band ranges from ultraviolet to near infrared, and can respond to laser pulses with femtosecond pulse width, and the response time can reach picoseconds

Method used

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  • Super-fast wide-wave-band optical detector made by by doped oxide and silicon heterojunction material
  • Super-fast wide-wave-band optical detector made by by doped oxide and silicon heterojunction material
  • Super-fast wide-wave-band optical detector made by by doped oxide and silicon heterojunction material

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Embodiment 1

[0029] Referring to FIG. 1 , an optical sensor chip 1 is made of a doped lanthanum manganese oxide and a silicon heterojunction material, and an ultrafast wideband high-sensitivity optical detector is prepared.

[0030]In this embodiment, a substrate is an n-type silicon wafer, on which a 300nm-thick, p-type La 0.7 Sr 0.3 MnO 3 photoresponsive material layer, forming La 0.7 Sr 0.3 MnO 3 / Si two-layer heterogeneous material, cut the heterojunction material into a size of 1×0.2cm 2 The photosensor chip 1 of the photosensor chip 1; remove the silicon oxide on the silicon surface with hydrofluoric acid, weld the second electrode 3 of about φ2mm on the silicon surface of the photosensor chip 1 with indium, and use indium on the La of the photosensor chip 1 0.7 Sr 0.3 MnO 3 The surface of the film is welded with the first electrode 2; two φ0.1mm copper wires are used as electrode leads, and one end of the two φ0.1mm copper first electrode leads 4 and the second electrode lead...

Embodiment 2

[0034] refer to figure 2 , select a 2-inch p-type silicon wafer, and directly epitaxially grow a 100nm-thick, n-type La on it 0.7 Te 0.3 MnO 3 To prepare heterojunction materials with thin films, after removing the oxide layer on the Si surface with FH, vacuum coating was used on La 0.7 Te 0.3 MnO 3 and Si surface by evaporation of silver film, the silver-coated La 0.7 Te 0.3 MnO 3 / Si two-layer heterogeneous material is cut into a rectangle of 10 mm × 2 mm as a detector chip, and the three detector chips are connected in series to make an optical sensor chip 1, wherein the La of the first detector chip is 0.7 Te 0.3 MnO 3 The surface of the thin film is in contact with the silicon substrate surface of the second photodetector chip and stacked, and so on, the La of the first photodetector chip after stacking 0.7 Te 0.3 MnO 3 The first electrode 2 of φ0.2mm copper wire is welded on the surface of the film; the second electrode 3 of φ2mm is welded on the silicon subs...

Embodiment 3

[0036] refer to image 3 , choose to make a layer of SrO buffer layer on the n-type silicon substrate, and then epitaxially grow 800nm ​​thick La 0.95 Ba 0.05 MnO 3 Thin film, by vacuum coating method in La 0.95 Ba 0.05 MnO 3 Platinum thin film is plated on the surface of Si and Si respectively, and the La after plating platinum thin film 0.95 Ba 0.05 MnO 3 / Si heterojunction material is cut into 15mm×3mm rectangular blocks to make photodetector chips, and 8 pieces of 15mm×3mm La 0.95 Ba 0.05 MnO 3 / Si photodetector chips are connected in series to make photosensor chip 1, the La of the first photodetector chip 0.95 Ba 0.05 MnO 3 The surface of the film is laminated in contact with the silicon substrate of the second photodetector chip, and by analogy, the side of the laminated photosensor chip 1 is used as the incident surface of the detected light. The outermost La 0.95 Ba 0.05 MnO 3 The thin film serves as the first electrode 2 , and the outermost n-type sil...

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Abstract

The present invention relates to photodetector made of doping oxide and silicon heterojunction material, with ultra-fast responding, broadband, high sensitivity and anti-radiation. It contains casing, optical sensor, first electrode, second electrode, two electrode leading wires, insulating piece, first metal block, second metal block and metal bolt; wherein said optical sensor consisting of one or more of series connected doping oxide and silicon heterojunction material decetor chip and installed in one metal enclosure, leading out output port by coaxial cable coaxial cable joint, said decetor being photoproduction volt type photoelectric detector, directly generating voltage alarm by light radiating without any auxiliary accessory power supply and electronic circuit. Its responding wave band is from ultraviolet to far infrared, capable of responding femtosecond pulse width laser pulse, response speed reaching ps, capable of detecting pulsed laser waveform with hundred of ps pulsewidth. Said invention has very high sensitivity and strong radioresistance ability.

Description

technical field [0001] The invention relates to a photodetector, in particular to an ultrafast response, wide frequency band, high sensitivity and anti-radiation photodetector made of doped oxide and silicon heterojunction materials. Background technique [0002] The detection of light energy, power, pulse width and waveform has a very wide range of applications in scientific research, military, national defense, production and life. Although people have developed many different types of photodetectors, such as pyroelectric, photoelectric, pyroelectric, etc., the work on new photodetectors is still an interesting and ongoing work. The applicant has also obtained the following several laser detector patents in this respect, such as patent number: ZL89202869.6; patent number: ZL89220541.5; The patented detectors are all made of piezoelectric materials, and the photoresponse of the detectors is not fast enough. The applicant has also applied for a photodetector patent using a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J1/42G01J9/00G01J11/00
Inventor 吕惠宾何萌黄延红赵昆金奎娟陈正豪周岳亮杨国桢
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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