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Mfg. field emitting vacuum microelectronic element by utilizing nulear track tech and display thereof

A microelectronic device and field emission technology, applied in cathode ray lamps/electronic injection lamps, electrical components, image/graphic display tubes, etc., can solve the problems of difficult parameter control, complicated process, and difficulty in making large sizes, etc.

Inactive Publication Date: 2006-09-20
毕明光
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Its process is complex, parameter control is difficult, and it is especially difficult to make large-scale
The invention "METHOD FOR PRODUCTINGPLANAR SURFACES HAVING VERY FINE PEAKS IN THE MICRONRANGE" once described the use of nuclear track film to manufacture field emitters, but did not consider the formation of microelectronic structures such as gates, inter-electrode supports, and electron beam channels, nor discussed how to Obtain a Field Emitter Compliant with the Requirements

Method used

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  • Mfg. field emitting vacuum microelectronic element by utilizing nulear track tech and display thereof
  • Mfg. field emitting vacuum microelectronic element by utilizing nulear track tech and display thereof
  • Mfg. field emitting vacuum microelectronic element by utilizing nulear track tech and display thereof

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0098] ①Take a 50 micron thick mica sheet

[0099] ② Utilize uranium ions with a nuclear energy of 7 MeV to vertically irradiate the above-mentioned mica, and the irradiation density is 1×10 7 / cm 2 .

[0100] ③Etch the two sides of the above-mentioned irradiated mica sheet with 40% hydrofluoric acid for different times, so that the etching depth on one side is about 48 microns, and the etching depth on the other side is about 1-2 microns.

[0101] ④ Platinum plating on one side of the etched hole with a depth of 1 to 2 microns

[0102] ⑤ Use the platinum-plated side as the cathode temporarily, fill the mica hole with copper by electrochemical plating until the 48-micron deep cone hole is filled, and plate until the surface is covered to form a base and connections.

[0103] ⑥Remove the temporary platinum layer as the electrode.

[0104] ⑦Use 40% hydrofluoric acid to further etch the 1-2 micron deep hole until the channel hole expands, the tip of the emitter is no longer b...

example 2

[0106] ① Take a polyester film with a thickness of 4 microns.

[0107] ② Use 20MeV neon ions to irradiate perpendicularly to the above film. Irradiation density 1×10 7 piece / Cm 2 .

[0108] ③ Use 5 mol of sodium hydroxide to perform constant temperature etching on the above-mentioned irradiated polyester film, first measure the track etching rate Vt, and then control the etching time t on both sides of the film 1 =L1 / Vt;t 2 =L2 / Vt. In the formula, L1 is the length of the taper hole on the emitter side, and L2 is the length of the taper hole on the electron channel side.t 1 is t 2 About 3 times of that, the cone hole on the emitter side is about 3 μm deep, and the cone hole on the electron channel side is about 1 μm deep. Or only on the plane where the field emitter is made by t 1 Time etch.

[0109] ④ Plating silver on the field emitter side of the pre-etched thin film by vacuum coating method, so that the deep hole is filled, and a silver layer is formed on the surfac...

example 3

[0112] ①Preparation of polycarbonate-copper-polycarbonate composite material, the thickness of the polycarbonate used as interpolar support A is 4 microns, the thickness of copper is nanoscale, and the thickness of polycarbonate interpolar support B is 8 microns.

[0113] ② Use xenon ions with an energy of 200 Mev to vertically irradiate the above-mentioned composite film with a density of 1×10 8 / cm 2

[0114] ③ Local sensitization treatment is performed on the irradiated composite film by using ultraviolet rays, so that the track etching sensitivity of the substrate A is above 1000.

[0115] ④ Etching the above-mentioned radiation-sensitized composite film with sodium hydroxide solution, the etching time is T=4 / Vt. Make the taper hole on the substrate A reach the copper of the grid, and the diameter of the taper hole is only a few nanometers.

[0116] ⑤ Use the grid as the cathode for the above-mentioned composite film that has been sensitized by radiation and initially e...

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Abstract

The disclosed technique and structure possesses advantages: easy to obtain materials, simple technical procedure, easy of controlling parameters, high integrity, low cost, and suitable for continuous production in industrial scale. The structure supports tabulate device and display in large plane as well as thin film device and display in large area. Technical scheme is as following: using particle beam with certain energy irradiates and impenetrates basal body, which is dielectric material, or thin film or flat plate produced from composite of dielectric and conducting material. When particles pass through dielectric, local modification is formed near to track. Thus, tapered hole in each shape can be made through etching process. Using techniques of deposition, etching prepares composition devices with functions of electron emission and transmission.

Description

technical field [0001] This article relates to a field emission vacuum microelectronic device. The distance between the field emitter and the grid is smaller than the free path of electrons in vacuum. Electrons are transported in a missile-guided manner in vacuum, with fast transmission speed, good coherence, and lens effect. Easy, high cut-off frequency and other advantages, broad application prospects. Mainly used for ultrafast switches, microwave amplifiers and generators, new light sources and displays, new electron beam lithography machines, high-intensity electron sources or ion sources, etc. After the 1990s, it attracted the attention of scientists from all over the world. The invention mainly describes a field emission vacuum microelectronic device manufactured by nuclear track etching technology, including field emission vacuum microelectronic diodes, transistors, multi-electrode devices and vacuum field emission displays. Background technique [0002] The manufac...

Claims

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Application Information

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IPC IPC(8): H01J31/12H01J63/00
Inventor 毕明光徐桂凤毕颖
Owner 毕明光
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