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Production process of silicon wafter for solar cell with waste IC chips

A technology for solar cells and integrated circuits, which is used in electronic waste recycling, solid waste removal, waste treatment, etc., can solve the problems of high quality requirements of silicon polycrystalline, low impurity content, and high production costs, and achieve high photoelectric conversion efficiency. Effect

Inactive Publication Date: 2006-08-02
浙江东源电子有限公司
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  • Summary
  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

Another method is the method of producing silicon single crystal by the Czochralski method. The crystal structure of silicon wafers produced by this method is more complete than that of cast polycrystalline silicon wafers, and the impurity content is lower than that of cast polycrystalline silicon wafers. The solar energy produced by this silicon wafer The photoelectric conversion efficiency of the cell is high, but the silicon polycrystalline quality required by this method is high, the production cost is high, and the wafer needs to be cut into quasi-square pieces during the silicon wafer processing process

Method used

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Embodiment Construction

[0009] The process flow and technical points of the present invention

[0010] 1. The metal and silicide on the surface of the silicon wafer are peeled off

[0011] In the integrated circuit process, due to the needs of the electrode pins, a metal film is often sputtered on the surface of the silicon wafer. Common metals include aluminum, copper, etc. In addition, metal and silicon contact to form metal silicides, silicon and oxygen , Nitrogen forms silicon oxide and silicon nitride. These metals and compounds, as harmful impurities, must first be chemically removed. The specific method is as follows:

[0012] 1) Dilute hydrochloric acid or dilute sulfuric acid to strip light metals

[0013] The waste silicon wafers are loaded with a special flower blue (sheet rack) and placed in a dilute hydrochloric acid or dilute sulfuric acid solution. The metals in the metal activity sequence table that are more active than hydrogen can react with dilute acid.

[0014] Such as

[0015] Th...

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PUM

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Abstract

The production process of silicon chip for solar cell with waste integrated circuit chips includes the following steps: treating waste integrated circuit chips with HCl and H2SO4 to eliminate Mg, Al, Mn, Zn, Cr, Fe, Ni, Sn, Pb and other metals with activity higher than hydrogen; treating with HNO3 to eliminate Cu, Hg, Ag and other transition metals; treating with mixed acid of HF and HNO3 to eliminate metal silicide, silicon oxide and silicon nitride; single-side thinning and double-side thinning to eliminate active area and silicon chip with original resistivity; cleaning, classifying, detecting and grading to obtain silicon chip for solar cell. The process can obtain silicon chip with less impurity and intact crystal structure for producing solar device with high photoelectronic conversion efficiency.

Description

Technical field [0001] The invention relates to a manufacturing method for producing silicon wafers for solar cells by using waste silicon wafers of integrated circuits. Background technique [0002] There are generally two manufacturing methods for silicon wafers used in solar cells. One is the method of casting polycrystalline silicon. This method is simple in process and low in production cost. It can be directly cut into square ingots, which can be easily cut into solar cells. Square silicon wafers, but the silicon wafers produced by this method have polycrystalline structure, many defects, high impurity content, and low photoelectric conversion efficiency of the produced solar cells. Another method is the Czochralski method to produce silicon single crystals. The crystal structure of silicon wafers produced by this method is more complete than that of cast polycrystalline silicon wafers, and the impurity content is lower than that of cast polycrystalline silicon wafers. Sola...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B09B3/00
CPCY02W30/20Y02W30/82
Inventor 刘培东
Owner 浙江东源电子有限公司
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