Heterojunction structure and photoelectric detector based on platinum diselenide and silicon, and preparation method of heterojunction structure and photoelectric detector

Abstract

The invention discloses a heterojunction structure and a photoelectric detector based on platinum diselenide and silicon, and a preparation method of the heterojunction structure and the photoelectric detector, according to the heterojunction structure and the photoelectric detector, a thin insulating layer exists between a PtSe2 layer and a Si layer, and the insulating layer serves as a charge blocking layer or a tunneling layer and can regulate and control the charge transport characteristic. In order to further improve the characteristics of the photoelectric detector, the invention also discloses a method for preparing a metal nanoparticle layer on the platinum diselenide layer of the heterojunction structure so as to form a metal nanoparticle / platinum diselenide / insulating layer / silicon heterojunction structure. The preparation method of the heterojunction and the photoelectric detector thereof is simple, low in cost, compatible with a silicon process and low in preparation cost. The photoelectric detector formed by the heterojunction structure has the excellent characteristics of zero bias voltage driving, high response rate, high detection rate, high switch ratio, low dark current, high stability, wide spectral response and the like, and paves a way for a new generation of silicon-based photoelectric detectors.

Description

technical field [0001] The invention relates to the technical field of heterojunction and heterojunction-based photodetectors, in particular to a heterojunction structure based on platinum diselenide and silicon, a photodetector, and its preparation. Background technique [0002] Photodetectors (PDs) are one of the most important optoelectronic devices, which convert incident light signals into electrical signals. Photodetectors (PDs) are an important part of optoelectronic systems, and even more so, a key component of the modern miniaturized electronics industry. The research and application of photodetectors have greatly promoted the progress and development of society. However, with the rapid development of the times, the problems of traditional photodetectors are gradually exposed. Although the traditional silicon-based photoelectric detection technology is relatively mature, it has fallen into a bottleneck period in terms of operating wavelength, responsivity and spee...

AI Technical Summary

Problems solved by technology

However, currently PtSe 2 / Si heterojunction photodetectors have the disadvantage of high dark current (10pA at zero bias and 10nA at negative bias) regardless of whether they work at zero bias or negative bias voltage, and the dark current is relatively high. will result in the PtSe 2 The specific detectivity of the / Si heterojunction photodetector will be greatly reduced, that is, the ability to detect weak light will be greatly weakened

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