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Preparation method and manufacturing die of ITO tubular target material with large length-diameter ratio

A large aspect ratio, tubular technology, applied in the field of preparation of large aspect ratio ITO tubular targets, to achieve the effect of eliminating drastic changes in shrinkage rate, reducing sintered body deformation, and high-density sintered body

Active Publication Date: 2022-04-26
江苏东玖光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The invention provides a method for preparing a large aspect ratio ITO tubular target and a mold for making it, which solves the existing technical problems

Method used

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  • Preparation method and manufacturing die of ITO tubular target material with large length-diameter ratio

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preparation example Construction

[0027] see figure 1 , the present invention provides a preparation method of a large aspect ratio ITO tubular target, comprising the following steps:

[0028] In step 1, the indium oxide powder and the tin oxide powder are uniformly mixed by a V-type mixer, a three-dimensional mixer and other equipment according to a weight percentage of 90:10;

[0029] Step 2, roasting the mixed powder to form ITO mixed powder;

[0030] Step 3: Use deionized water with electrical conductivity ≥10MΩ as the dispersion medium for the ITO mixed powder, add polyacrylate ammonium as the dispersant, PVA polyvinyl alcohol as the binder, and use Φ3-5mm yttrium-stabilized zirconia balls as the dispersion medium. Grinding medium, ball mill 20-60hr;

[0031] In step 4, the ITO mixed powder treated in step 3 is subjected to agglomeration and granulation, and the tap density of the granulated ITO powder is 2.0-3.5g / cm3, and the moisture content is 0.5-2.5%;

[0032] Step 5: Load the agglomerated and gra...

Embodiment 1

[0042] Embodiment 1, a preparation method of a large aspect ratio ITO tubular target, comprising the following steps:

[0043] Step 1, mix the indium oxide powder with a specific surface area of ​​22.5m2 / g and the tin oxide powder with a specific surface area of ​​11m2 / g according to a ratio of 90:10 (wt%), and use a three-dimensional mixer to mix for 12hr;

[0044] Step 2, calcining the mixed powder at 1250° C. under an oxygen atmosphere for 3.5 hr to obtain an ITO mixed powder with a specific surface area of ​​5.5 m2 / g;

[0045] Step 3: Use deionized water with electrical conductivity ≥ 10MΩ as the dispersion medium for the ITO mixed powder, add polypropylene ammonium as the dispersant, PVA polyvinyl alcohol as the binder, and use Φ5mm yttrium-stabilized zirconia balls as the grinding medium , ball mill 60hr;

[0046] In step 4, the ball-milled ITO mixed powder is subjected to agglomeration and granulation, and the tap density of the granulated ITO powder is 2.75g / cm3 and t...

Embodiment 2

[0050] Embodiment 2, a preparation method of a large aspect ratio ITO tubular target, comprising the following steps:

[0051] Step 1, mix the indium oxide powder with a specific surface area of ​​22.5m2 / g and the tin oxide powder with a specific surface area of ​​11m2 / g according to the ratio of 90:10 (wt%), and use a three-dimensional mixer to mix for 12hr

[0052] Step 2, calcining the mixed powder at 1050° C. under an oxygen atmosphere for 3.5 hr to obtain an ITO mixed powder with a specific surface area of ​​7.6 m2 / g;

[0053] Step 3: Use deionized water with electrical conductivity ≥ 10MΩ as the dispersion medium for the ITO mixed powder, add polypropylene ammonium as the dispersant, PVA polyvinyl alcohol as the binder, and use Φ5mm yttrium-stabilized zirconia balls as the grinding medium , ball mill 60hr;

[0054] In step 4, the ball-milled ITO mixed powder is agglomerated and granulated, and the tap density of the granulated ITO powder is 2.3 g / cm 3 and the moisture c...

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Abstract

The invention discloses a preparation method and a manufacturing mold of an ITO tubular target material with a large length-diameter ratio, and relates to the technical field of preparation methods of ITO tubular target materials, and the preparation method comprises the following steps: step 1, uniformly mixing indium oxide powder and tin oxide powder according to a weight percentage of 90: 10; step 2, roasting the mixed powder to form ITO (Indium Tin Oxide) mixed powder; through the steel inner core with taper, the inner diameters of the upper end and the lower end of the ITO tubular biscuit have natural taper, so that the inner diameter deviation of the upper end and the lower end caused by inconsistent shrinkage rates from the lower end to the upper end due to friction between the ITO tubular biscuit and the burning bearing plate in the sintering process can be reduced; meanwhile, the high-roundness zirconium oxide balls which do not react with the ITO tubular biscuit are used as the burning bearing plate, the shrinkage resistance generated when the ITO tubular biscuit is sintered from bottom to top can be reduced through relative free sliding or dislocation of the zirconium oxide balls, and uniform and consistent shrinkage of the inner diameter of the upper end and the inner diameter of the lower end of the large-length-diameter-ratio tube target is achieved.

Description

technical field [0001] The invention belongs to the technical field of preparation methods for ITO tubular targets, and in particular relates to a preparation method for large aspect ratio ITO tubular targets and a mould. Background technique [0002] ITO (indium tin oxide) film is an n-type semiconductor material with excellent transparent and conductive properties. ITO film is prepared from ITO target material by magnetron sputtering and other methods. It has high light transmittance and good conductivity. , has the advantages of excellent chemical stability, thermal stability and etchability. It has been widely used in the manufacture of flat panel liquid crystal displays (TFT-LCD), electroluminescent devices (OLED), touch screens, solar cells, etc. [0003] The main process of preparing ITO transparent conductive film is to use magnetron sputtering technology. With the development of flat-panel display technology to the advanced generation, the size of the ITO thin fil...

Claims

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Application Information

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IPC IPC(8): C04B35/01C04B35/622C04B35/638C23C14/08C23C14/34C23C14/35
CPCC04B35/01C04B35/622C04B35/638C23C14/086C23C14/3414C23C14/35C04B2235/3293C04B2235/602C04B2235/6562C04B2235/6565C04B2235/6567C04B2235/77C04B2235/96C04B2235/9607C04B2235/94
Inventor 孔伟华
Owner 江苏东玖光电科技有限公司
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