Flux for beta-gallium oxide crystal growth and crystal growth method based on flux

Abstract

The invention discloses a fluxing agent for beta-Ga2O3 crystal growth and a crystal growth method based on the fluxing agent. According to the invention, B2O3-alkali metal oxide is used as a main material, a small amount of molybdenum oxide such as MoO3 and molybdate such as K2Mo2O7 and Na2Mo2O7 are used as auxiliary materials, and the molar ratio of B2O3-alkali metal oxide to molybdenum oxide to molybdate is (0.8-1.5): (0.8-2.5): (0-0.3) as a fluxing agent system for growth of beta-Ga2O3 crystals. The fluxing agent system provided by the invention does not contain toxic and harmful components such as lead oxide and lead fluoride which are commonly used in high-temperature fluxing agents, the crystal growth temperature interval is 950-1080 DEG C, the growth temperature of the crystal is effectively reduced, the solvent viscosity is small, the component volatilization is less, the high-temperature solution is clear and transparent, the crystal growth process is convenient to control in real time, and the obtained crystal is relatively good in quality; no wrapping phenomenon exists, and the high-quality beta-Ga2O3 crystal is easy to obtain.

Description

technical field [0001] The invention relates to a single crystal growth method, in particular to a β-Ga 2 o 3 A flux for crystal growth and a crystal growth method based on the flux. Background technique [0002] β-Ga 2 o 3 Crystal is a direct bandgap semiconductor material with a bandgap width of 4.9eV. It belongs to the fourth-generation wide-bandgap semiconductor material. It has a wider bandgap than the famous third-generation semiconductor materials such as SiC and GaN, and its absorption cut-off edge is 250nm. , can be used in optical communication and optoelectronic devices in the deep ultraviolet region, β-Ga 2 o 3 Crystal also has a higher breakdown voltage and lower loss. It is an ideal material next to diamond in terms of withstand voltage and power, and can be used to prepare power devices with high withstand voltage, high power, and low loss. Therefore, the wide bandgap β-Ga 2 o 3 Semiconductor crystal materials are one of the most popular semiconductor ...

AI Technical Summary

Problems solved by technology

Moreover, too high growth temperature is harmful to the crucible material, β-Ga 2 o 3 Crystal performance regulation poses serious challenges

As early as the 1960s, people proposed the flux method to grow β-Ga 2 o 3 crystal, this method effectively reduces the β-Ga 2 o 3 Crystal growth temperature (generally lower than 1600 ° C), but the flux method requires the use of PbO, PbF 2 and other toxic and harmful ingredients, and the grown crystals have macroscopic defects such as packages and clouds, and the usable part of the crystals is limited

The viscosity of some flux systems is too high, it is not easy to transport the solute, and the crystal growth period is too long

In addition, because the temperature of crystal growth is still high, gallium oxide still has the problem of melt volatilization, the crystallization interval is narrow, the temperature fluctuation of saturation point is large, and the stability of crystal growth is poor, which is not conducive to high-quality β-Ga 2 o 3 crystal growth