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High fundamental frequency wafer grinding process

A high fundamental frequency wafer, grinding process technology, applied in the direction of grinding workpiece supports, machine tools suitable for grinding workpiece edges, grinding machines, etc., to prevent excessive temperature, improve grinding efficiency and quality, and have a good cooling effect.

Pending Publication Date: 2022-02-11
JIYUAN CRYSTAL PHOTOELECTRIC FREQUENCY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the deficiencies of the prior art, the present invention provides a high-fundamental-frequency wafer grinding process, which uses magnetorheological fluid for grinding, which reduces the stress during contact, reduces the temperature at the grinding place, improves the grinding quality and reduces the Advantages such as wafer damage, solve the problems raised in the background technology

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Embodiment one: a kind of high fundamental frequency wafer grinding technique, comprises the following steps:

[0026] Step 1: Loading: Use a belt conveyor for loading. First, place the wafers to be ground on the surface of the belt conveyor one by one, and then start the belt conveyor to move the wafers on the belt surface to the bottom of the grinder.

[0027] Step 2: Clamping: Remove the wafer on the belt surface from the belt, then place the removed wafer on the processing table of the grinder, and then clamp the wafer by the clamping device, repeat this action, Put all the processing tools on the surface of the processing table into the wafer, and complete the clamping. In this process, the annular disk groove is used to limit the wafer, and the shape of the disk groove is redesigned, and the setting of the planetary wheel and the sun wheel is adopted.

[0028] Step 3: Start grinding: use magnetorheological fluid to grind the wafer. During this process, the magneto...

Embodiment 2

[0034] Embodiment two: a kind of high fundamental frequency wafer grinding technique, comprises the following steps:

[0035] Step 1: Loading: Use a belt conveyor for loading. First, place the wafers to be ground on the surface of the belt conveyor one by one, and then start the belt conveyor to move the wafers on the belt surface to the bottom of the grinder.

[0036] Step 2: Clamping: Remove the wafer on the belt surface from the belt, then place the removed wafer on the processing table of the grinder, and then clamp the wafer by the clamping device, repeat this action, Put all the processing tools on the surface of the processing table into the wafer, and complete the clamping. In this process, the annular disk groove is used to limit the wafer, and the shape of the disk groove is redesigned, and the setting of the planetary wheel and the sun wheel is adopted.

[0037] Step 3: Start grinding: use magnetorheological fluid to grind the wafer. During this process, the magneto...

Embodiment 3

[0043] Embodiment three: a kind of high fundamental frequency wafer grinding technique, comprises the following steps:

[0044] Step 1: Loading: Use a belt conveyor for loading. First, place the wafers to be ground on the surface of the belt conveyor one by one, and then start the belt conveyor to move the wafers on the belt surface to the bottom of the grinder.

[0045] Step 2: Clamping: Remove the wafer on the belt surface from the belt, then place the removed wafer on the processing table of the grinder, and then clamp the wafer by the clamping device, repeat this action, Put all the processing tools on the surface of the processing table into the wafer, and complete the clamping. In this process, the annular disk groove is used to limit the wafer, and the shape of the disk groove is redesigned, and the setting of the planetary wheel and the sun wheel is adopted.

[0046] Step 3: Start grinding: use magnetorheological fluid to grind the wafer. During this process, the magne...

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Abstract

The invention relates to the technical field of wafer processing, and discloses a high fundamental frequency wafer grinding process. Through the steps of feeding, clamping, grinding starting, cooling, grinding scrap cleaning, magnetorheological fluid recycling, disassembling and the like, and through the process design that the magnetorheological fluid is adopted to grind the wafer, during use, the magnetorheological fluid can reduce hard contact with the wafer during grinding, the wafer is prevented from being greatly abraded during grinding, and the purpose of reducing the scrap rate is achieved; the inner diameter of the nozzle and the flow velocity of the magnetorheological fluid can be adjusted, so that the grinding efficiency and quality are further improved during use, and a cold air box is adopted to cool the grinding part, so that the stress in the wafer is increased, the purpose of reducing the stress in the wafer is achieved, and the quality of the wafer is improved; the cold air temperature is adjustable and can be adjusted according to actual use, so that the purpose of better cooling effect aiming at the temperature environment of different wafers in actual use is achieved.

Description

technical field [0001] The invention relates to the technical field of wafer processing, in particular to a high fundamental frequency wafer grinding process. Background technique [0002] With the rapid development of electronic information technology, the demand for fundamental frequency of frequency components is getting higher and higher. The demand for high-end electronic products has reached the level of base frequency above 200MHz. At present, the base frequency produced by traditional grinding methods can reach up to 70MHz. How to produce base frequency wafers above 200MHz poses the most challenge to the base frequency production of quartz wafers. sexual demands. [0003] Most of the existing high fundamental frequency wafers need to go through technological processes such as loading, clamping, grinding, cleaning, and unloading when grinding. However, the following problems are prone to occur in the actual processing of this process: 1. The hard contact between the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B31/112B24B31/12B24B41/00B24B57/02B24B55/02B24B41/06
CPCB24B31/112B24B31/12B24B41/005B24B57/02B24B55/02B24B41/068
Inventor 李渐进翟彦飞石玉浩卫磊
Owner JIYUAN CRYSTAL PHOTOELECTRIC FREQUENCY TECH CO LTD
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