High-sensitivity light detection device

A light detection device and sensitive technology, applied in the field of light detection, can solve problems such as narrow detection wavelength range, and achieve the effect of wide detection wavelength range and good application prospect.

Inactive Publication Date: 2022-02-08
于孟今
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the band gap limitation of traditional semiconductor materials, the detection wavelength range is narrow. For example, the detection cut-off wavelength of silicon-based detectors is 1100 nanometers

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] The invention provides a highly sensitive light detection device. Such as figure 1 As shown, the highly sensitive photodetection device includes an antiferromagnetic layer 1 , a pinning layer 2 , a barrier layer 3 , a free layer 4 , and a noble metal micro-nano structure 5 . The material of the antiferromagnetic layer 1 is a hard magnetic antiferromagnetic material, specifically, the material of the antiferromagnetic layer 1 is IrMn, PtMn, FeMn. The pinning layer 2 is placed on the antiferromagnetic layer 1 . The material of the pinning layer 2 is a metal or semi-metal with high spin polarizability, specifically, the material of the pinning layer 2 is Co, Fe, CoFe, CoFeB, CoFeAl alloy. The barrier layer 3 is placed on the pinning layer 2 . The free layer 4 is placed on the barrier layer 3 . The material of the free layer 4 is soft magnetic material with weak magnetic anisotropy, specifically, the material of the free layer 4 is NiFe alloy, CoFe alloy, CoFeB alloy. ...

Embodiment 2

[0028] On the basis of Example 1, such as figure 2 As shown, the noble metal micro-nanostructure 5 is inclined relative to the surface of the free layer 4 , and the noble metal micro-nanostructure 5 is partially placed in the free layer 4 . In this way, on the one hand, the action distance between the noble metal micro-nanostructure 5 and the light to be measured is increased, thereby generating stronger localized surface plasmon resonance on the noble metal micro-nanostructure 5, and thus the noble metal micro-nanostructure 5 On the other hand, since the noble metal micro-nanostructure 5 is partly placed in the free layer 4, the heat transfer between the noble metal micro-nanostructure 5 and the free layer 4 is strengthened, so that the temperature of the free layer 4 Change more. The effects of these two aspects make the spin state of the free layer 4 change more, thereby changing the magnetoresistance of the magnetic tunnel junction more, so as to realize light detection ...

Embodiment 3

[0030] On the basis of Example 1, such as image 3 As shown, a second noble metal micro-nano structure 6 is also included, the second noble metal micro-nano structure 6 is placed in the free layer 4 , and the second noble metal micro-nano structure 6 is connected to the noble metal micro-nano structure 5 . The material of the second noble metal micro-nanostructure 6 is the same as that of the noble metal micro-nanostructure 5 . In this way, localized surface plasmon resonance is formed in the composite structure composed of the noble metal micro-nanostructure 5 and the second noble metal micro-nanostructure 6, and at the junction of the noble metal micro-nanostructure 5 and the second noble metal micro-nanostructure 6 , corners generate more heat, thereby changing the temperature of the free layer 4 more; in addition, because the second noble metal micro-nano structure 6 is placed in the free layer 4, it can also ensure that the heat generated by the above-mentioned composite ...

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Abstract

The invention belongs to the technical field of optical detection, and relates to a high-sensitivity optical detection device. The high-sensitivity optical detection device comprises an antiferromagnetic layer, a pinning layer, a barrier layer, a free layer and a precious metal micro-nano structure. According to the high-sensitivity light detection device, the pinning layer, the barrier layer and the free layer form a magnetic tunnel junction. When the device is used, to-be-measured light irradiates the precious metal micro-nano structure, and meanwhile, a fixed magnetic field is applied to the device. The intensity or wavelength of the to-be-measured light is determined by measuring the magnetoresistance difference of the magnetic tunnel junction under the irradiation of the to-be-measured light and without the irradiation of the to-be-measured light. According to the high-sensitivity light detection device of the invention, precious metal micro-nano structures with different sizes or shapes can be arranged, so that the resonant wavelength of the precious metal micro-nano structures can be adjusted, so that detection of incident light with different wavelengths is realized. Therefore, the high-sensitivity light detection device of the invention has the advantage of wide detection wavelength range of light, and has a good application prospect in the field of light detection.

Description

technical field [0001] The invention relates to the technical field of light detection, in particular to a highly sensitive light detection device. Background technique [0002] The photodetector is one of the core chips at the receiving end of the optoelectronic basic chip. The photodetector converts light data into electrical signals for analysis by subsequent signal processing circuits. Traditional photodetectors use the pyroelectric effect, photoelectric effect, and electroabsorption effect of materials to detect incident light. With the advancement of science and technology and the development of society, the application of photoelectric detection devices is becoming more and more extensive. Correspondingly, the requirements for photoelectric detection devices are getting higher and higher. [0003] Silicon material, as a traditional material in the field of microelectronics, has gradually formed an incomparable advantage over other materials in terms of processing tec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J1/42G01J9/00
CPCG01J1/42G01J9/00
Inventor 于孟今
Owner 于孟今
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