Low dark current high-speed pin detector and processing method thereof

Abstract

The invention discloses a low-dark-current high-speed PIN detector comprising a substrate. A P-type ohmic contact layer is grown on the substrate. An antireflection film covers the P-type ohmic contact layer. The antireflection film is provided with at least one P-type ohmic contact electrode. A blocking layer covers the area of the upper end surface of the substrate apart from the P-type ohmic contact layer. The antireflection film covers the blocking layer. An N-type ohmic contact layer and N-type ohmic contact electrodes are grown on the lower end surface of the substrate from the top to the bottom in turn in a covering way. A first isolation groove is arranged on the upper end surface of the substrate. A second isolation groove is arranged on the lower end surface of the substrate. Isolation material is filled in the first isolation groove and the second isolation groove. The first isolation groove is arranged at the external circumferential side of the P-type ohmic contact layer. The first isolation groove and the second isolation groove are vertically corresponding. Dark current in the device can be effectively reduced and the effect is excellent so that the low-dark-current high-speed PIN detector has extremely high use and popularization value.

Description

technical field [0001] The invention relates to a photoelectric detector, in particular to a low dark current high-speed PIN detector, belonging to the field of semiconductor photoelectric devices. Background technique [0002] As an important "carrier" to realize optical signal detection, PIN detector has the advantages of simple process, high detection efficiency and stable performance. It plays an important supporting role and is the commanding height for various countries to seize. For example, in high-energy radiography such as security inspection and medical treatment, PIN photodetectors cooperate with scintillators to realize the process of converting weak light signals into electrical signals and outputting imaging. [0003] The dark current of PIN detectors can be divided according to the relationship with the device size: the line dark current related to the circumference, the surface dark current related to the area, and the dark current compensation not related ...

AI Technical Summary

Problems solved by technology

And because of the deep structure of the PIN detector, the traditional ion implantation process is difficult to directly apply to the production and processing of the PIN detector.

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