Low dark current pin detector and its processing method

Abstract

The invention discloses a low-dark-current PIN detector comprising a substrate. A P-type ohmic contact layer is grown on the upper end surface of the substrate. At least one P-type ohmic contact electrode contacted with the P-type ohmic contact layer is arranged on the P-type ohmic contact layer. An antireflection film of the specific thickness for different wavelength is grown on the upper end surface of the substrate. The upper end surface of the substrate is provided with two isolation grooves which are used for realizing blocking of the internal electric field of a device and the edge of the device. The isolation grooves are arranged at the two sides of the P-type ohmic contact layer. Isolation material is filled in the isolation grooves. A blocking layer covers the area apart from the grooves of the upper end surface of the substrate. An N-type ohmic contact layer and N-type ohmic contact electrodes are grown on the lower end surface of the substrate from the top to the bottom in turn in a covering way. Dark current in the device can be effectively reduced and the use effect is excellent so that the low-dark-current PIN detector has extremely high use and popularization value.

Description

technical field [0001] The invention relates to a photoelectric detector, in particular to a low dark current PIN detector, which belongs to the field of semiconductor photoelectric devices. Background technique [0002] As an important "carrier" to realize optical signal detection, PIN detector has the advantages of simple process, high detection efficiency and stable performance. It plays an important supporting role and is the commanding height for various countries to seize. For example, in high-energy radiography such as security inspection and medical treatment, PIN photodetectors cooperate with scintillators to realize the process of converting weak light signals into electrical signals and outputting imaging. [0003] The dark current of PIN detectors can be divided according to the relationship with the device size: the line dark current related to the circumference, the surface dark current related to the area, and the dark current compensation not related to the ...

AI Technical Summary

Problems solved by technology

And because the junction depth of the PIN detector is deep, the traditional ion implantation process is difficult to directly apply to the production and processing of the PIN detector.

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