Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of texturing process of solar cell silicon wafer

A technology for solar cells and silicon wafers, applied in the field of solar cells, can solve the problems of unsatisfactory texturing effect, poor texturing stability and high surface reflectivity, improve photoelectric conversion efficiency, shorten texturing time, and repeat good effect

Active Publication Date: 2022-02-11
绍兴拓邦新能源股份有限公司
View PDF16 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, in the industrial production of polycrystalline silicon solar cells, the acid solution system is generally used to prepare polycrystalline suede. Generally, a mixed solution of hydrofluoric acid and nitric acid is used to etch the surface of silicon wafers, and the isotropy of polycrystalline silicon in hydrofluoric acid and nitric acid solutions is used. Corrosion, forming similar pit-like suede on the surface of different grains of the silicon wafer, but the texturing effect of this acid solution is not very ideal, there are large suede size and poor uniformity, and color difference between different grains Obvious, macroscopic appearance such as black line-like deep corrosion pits, high surface reflectivity, poor texture stability, etc.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of texturing process of solar cell silicon wafer
  • A kind of texturing process of solar cell silicon wafer
  • A kind of texturing process of solar cell silicon wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] The present embodiment provides a kind of texturing process of solar cell silicon chip, and described process comprises the following steps:

[0044] S1: Surface pretreatment: immerse the solar cell silicon wafer in the pretreatment solution, and ultrasonically treat it at 80°C for 40min, the ultrasonic frequency is 20kHz, and the power density is 0.4W / cm 2 , the pretreatment solution is added to 53.6 parts by weight of deionized water by 20 parts by weight of lauryl alcohol polyethylene oxide ether, 10 parts by weight of ethylene glycol, 8 parts by weight of hydrogen fluoride, 8 parts by weight of nitric acid, and 0.4 parts by weight of sodium hypochlorite, Ultrasonic treatment for 20 minutes to obtain the pretreatment solution, the ultrasonic frequency is 20kHz, and the power density is 0.3W / cm 2 ;

[0045] S2: Texturing: Add 1.6 parts by weight of xylan esterified derivatives, 0.8 parts by weight of trisodium citrate, and 1 part by weight of ethylene glycol monobuty...

Embodiment 2

[0050] This embodiment provides another texture process for solar cell silicon wafers. The only difference between its steps and that of Example 1 is that in the preparation process of xylan esterified derivatives, the amount of carboxybenzoylsulfathiazole added 6 parts by weight.

Embodiment 3

[0052] This embodiment provides another texture process for solar cell silicon wafers. The only difference between its steps and that of Example 1 is that in the preparation process of xylan esterified derivatives, the amount of carboxybenzoylsulfathiazole added 7 parts by weight.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
molecular weightaaaaaaaaaa
degree of substitutionaaaaaaaaaa
reflectanceaaaaaaaaaa
Login to View More

Abstract

The invention provides a texturing process for silicon wafers of solar cells, which belongs to the technical field of solar cells, and specifically includes: 1) surface pretreatment: pretreating silicon wafers of solar cells with a pretreatment liquid; The cleaned solar cell silicon wafers are etched and textured, and the texturizing liquid used is the texturing liquid prepared by the aforementioned method; 3) Surface cleaning: the solar cell silicon wafers after texturing are cleaned with an alkaline solution. During the texturing process, adding xylan esterified derivatives to the texturing liquid can not only obtain a finely uniform microstructured textured surface, but also effectively reduce the reflectivity of polycrystalline silicon solar cells to sunlight, improve the photoelectric conversion efficiency, and improve the efficiency of silicon wafers. Less loss.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a texturing process for silicon wafers of solar cells. Background technique [0002] With the massive burning of fossil fuels, environmental pollution is becoming more and more serious, and clean and pollution-free energy has attracted more and more attention from all over the world. As a new type of clean and pollution-free energy, solar cells are used more and more widely. A solar cell is a semiconductor device that converts solar energy into electrical energy. Under the condition of light, a photogenerated current will be generated inside the solar cell, and the electrical energy will be output through the electrodes. Solar cells can be manufactured from a variety of semiconductors, and one of the commonly used semiconductor materials is crystalline silicon, but silicon wafers for solar cells have the problem of high surface reflectivity. In order to solve th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C09K13/08H01L31/0236H01L31/18
CPCC09K13/08H01L31/1804H01L31/02363Y02E10/547Y02P70/50
Inventor 李一鸣吴冰张震华
Owner 绍兴拓邦新能源股份有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products