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Graphene water-cooling heat dissipation packaging structure of IGBT module

A technology of water-cooling heat dissipation and packaging structure, applied in the direction of electrical components, circuits, mechanical equipment, etc., can solve the problems of low efficiency, poor heat dissipation performance of IGBT modules, and modules without shock-absorbing structures, so as to reduce energy consumption and promote heat dissipation time , The effect of saving the driving source

Inactive Publication Date: 2021-11-30
山姆泰酷半导体科技(苏州)有限公司
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Problems solved by technology

[0004] In order to overcome the above-mentioned defects of the prior art, an embodiment of the present invention provides a graphene water-cooled heat dissipation packaging structure of an IGBT module. The problem to be solved by the present invention is: the existing IGBT module has poor heat dissipation performance and low efficiency, and the module no shock absorbing structure

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  • Graphene water-cooling heat dissipation packaging structure of IGBT module
  • Graphene water-cooling heat dissipation packaging structure of IGBT module

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Embodiment Construction

[0020] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0021] The graphene water-cooled and heat-dissipating packaging structure of the IGBT module according to an embodiment of the present invention includes No. 1 chip 1, No. 2 chip 2 and filling resin 3, the outside of No. 1 chip 1 and No. 2 chip 2 are filled with filling resin 3, and the filling resin 3 Ceramic copper plates 4 are installed on the top and bottom, and No. 1 chip 1 and No. 2 chip 2 are respectively welded between the ceramic copper plates 4. The s...

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Abstract

The invention discloses a graphene water-cooling heat dissipation packaging structure of an IGBT module, and the structure comprises a first chip, a second chip and filling resin; the outer sides of the first chip and the second chip are filled with the filling resin, and the top and bottom of the filling resin are provided with ceramic copper plates (high-performance Cu-MAX materials). The first chip and the second chip are welded between the ceramic copper plates; the substrate is installed on the sides, away from the filling resin, of the ceramic copper plates; the radiator is installed on the side, away from the ceramic copper plates, of the substrate; and the top surface and the bottom surface of each ceramic copper plate are both coated with graphene coatings. The invention specifically relates to the technical field of IGBT modules. The cooling effect is improved by arranging the cold box and the circulating box for water cooling heat dissipation, the spring pipe is arranged between the water cooling box and the circulating box, the spring pipe can enable water in the inner cavity of the water cooling box to pass through the bent spring pipe for heat dissipation, the time for the water in the inner cavity of the water cooling box to enter the inner cavity of the circulating box is prolonged, and the heat dissipation time is shortened.

Description

technical field [0001] The present invention relates to the technical field of IGBT modules, and more specifically, the present invention relates to a graphene water-cooled and heat-dissipating package structure of an IGBT module. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor), Insulated Gate Bipolar Transistor, is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (Bipolar Transistor) and MOS (Insulated Gate Field Effect Transistor), with MOSFET The advantages of high input impedance and low conduction voltage drop of GTR. The saturation voltage of GTR is low, and the carrying current density is high, but the driving current is large; the driving power of MOSFET is small, and the switching speed is fast. [0003] However, the existing IGBT module has poor heat dissipation performance and low efficiency, and the module has no shock-absorbing structure, and the vibration will cause the soldering point to loosen. C...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/473H01L23/467H01L23/373H01L23/367F16F15/067
Inventor 李刚张承平
Owner 山姆泰酷半导体科技(苏州)有限公司
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