Silicon carbide material polishing method

Abstract

The invention relates to a silicon carbide material polishing method. The silicon carbide material polishing method comprises the following steps that S1, 800-mesh silicon carbide micro powder, 1200-mesh silicon carbide micro powder and 1500-mesh silicon carbide micro powder are evenly stirred with a non-aqueous solvent mixed solution, and silicon carbide polishing slurry of different specifications is obtained; S2, a silicon carbide component needing to be polished is filled with silicon carbide particle slurry prepared from 800-mesh silicon carbide powder, the internal silicon carbide slurry is subjected to high-speed rotary grinding through a stirrer to be subjected to rough polishing, and surface impurities and attachments are ground to be flat; S3, silicon carbide slurry prepared from 1200-mesh silicon carbide powder is poured into the polished component, high-speed rotary grinding is conducted, and medium polishing is conducted; S4, silicon carbide slurry prepared from 1500-mesh silicon carbide powder is poured into the polished component, high-speed rotary grinding is conducted, and fine polishing is conducted; and S5, diamond powder is used for repairing polished flaws. According to the polishing method, the surface roughness of the ultra-fine chemical component can be reduced, and the polished surface smoothness is improved.

Description

technical field [0001] The invention relates to the technical field of polishing, in particular to a polishing method for silicon carbide materials in the fine chemical industry. Background technique [0002] Silicon carbide has the characteristics of high hardness, high wear resistance, high corrosion resistance and high high temperature strength, and is used in various wear-resistant, corrosion-resistant, high-temperature resistant mechanical parts and various fields. For example, silicon carbide is used to make reactors, heat exchangers, rectification towers and some condensing systems. In the fine chemical industry, the inner surface of some parts made of silicon carbide needs to be polished to avoid impurities falling off the surface of the inner parts when the equipment is running, which will affect the purity of the materials contained inside. At the same time, if the internal surface treatment is not clean, it will cause the internal medium to adhere, which will eas...

AI Technical Summary

Problems solved by technology

At the same time, if the internal surface treatment is not clean, the internal medium will adhere, which will easily corrode the internal surface of the component and shorten the practical life of the component; moreover, too much adhered medium will cause material waste and increase operating costs. The more medium attached, the less conducive to cleaning

[0003] Due to the high hardness of silicon carbide, the corners of ordinary hardness abrasive grains are easily passivated by silicon carbide, resulting in unstable polishing process, poor polishing effect, and low polishing and grinding efficiency.