Layered manufacturing method for inner lead of semiconductor frame
A manufacturing method and inner lead technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of increasing the cost of cleaning, easy to produce sticking, and high cost of plastic packaging materials, and achieve higher Anti-delamination ability, reduce packaging difficulty and cost, and improve the effect of quality
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Examples
Embodiment 1
[0023] Embodiment 1, the present invention provides a technical solution: a layered manufacturing method of an inner lead of a semiconductor frame, comprising the following steps;
[0024] Step 1. Paste the wafer on the blue film and design the dicing road, and use the diamond knife to cut the whole wafer into individual crystal grains through the dicing road designed on the wafer;
[0025] Cutting process: It is necessary to use ultrapure water to remove cutting debris; and add carbon dioxide to pure water to eliminate static electricity generated by diamond knives and silicon wafers during cutting
[0026] Step 2. Coating silver glue in the designated base island area of the lead frame. The silver glue process requires curing of the silver glue, and placing the separated die on the base island area;
[0027] Step 3. Using high-purity metal wires to connect the circuit contacts on the die and the lead frame together by ultrasonic welding, the metal wires are gold wires; the...
Embodiment 2
[0032] Embodiment 2, the present invention provides a technical solution: a layered manufacturing method of an inner lead of a semiconductor frame, comprising the following steps;
[0033] Step 1. Paste the wafer on the blue film and design the dicing road, and use the diamond knife to cut the whole wafer into individual crystal grains through the dicing road designed on the wafer;
[0034] Cutting process: It is necessary to use ultrapure water to remove cutting debris; and add carbon dioxide to pure water to eliminate static electricity generated by diamond knives and silicon wafers during cutting
[0035] Step 2. Coating silver glue in the designated base island area of the lead frame. The silver glue process requires curing of the silver glue, and placing the separated die on the base island area;
[0036] Step 3. Using high-purity metal wires to connect the circuit contacts on the crystal grains and the lead frame through ultrasonic welding, the metal wires are copper w...
Embodiment 3
[0041] Embodiment 3, the present invention provides a technical solution: a layered manufacturing method of an inner lead of a semiconductor frame, comprising the following steps;
[0042] Step 1. Paste the wafer on the blue film and design the dicing road, and use the diamond knife to cut the whole wafer into individual crystal grains through the dicing road designed on the wafer;
[0043] Cutting process: It is necessary to use ultrapure water to remove cutting debris; and add carbon dioxide to pure water to eliminate static electricity generated by diamond knives and silicon wafers during cutting
[0044] Step 2. Coating silver glue in the designated base island area of the lead frame. The silver glue process requires curing of the silver glue, and placing the separated die on the base island area;
[0045] Step 3. Using high-purity metal wires to connect the circuit contacts on the die and the lead frame together by ultrasonic welding, the metal wires are aluminum wires;...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com