Method for preparing aluminum nitride by directly nitriding aluminum alkoxide

Abstract

The invention discloses a method for preparing aluminum nitride by directly nitriding aluminum alkoxide, and belongs to the technical field of aluminum nitride preparation, the method comprises the following steps: S1, putting aluminum alkoxide into a kiln, raising the temperature in the kiln to 200-500 DEG C under the nitrogen atmosphere, and keeping the temperature for 1-4 hours; and S2, raising the temperature in the kiln to 1100-1600 DEG C in the nitrogen atmosphere, performing heat preservation for 2-4 h, and preparing a reaction product containing aluminum nitride. According to the method for preparing the aluminum nitride by directly nitriding aluminum alkoxide, the characteristic that the aluminum alkoxide can be thermally decomposed and carbonized under the anaerobic high-temperature condition is utilized, the carbon amount of a carbon thermal reaction can be met under the condition that other carbon sources are not introduced, the introduction amount of pollution factors is reduced, and the purity of the aluminum nitride is improved; in the self-thermal decomposition and carbonization process of the aluminum alkoxide, carbon and aluminum can be in direct and full contact, so that the reaction area is increased; a large number of holes and pores are formed in the thermal decomposition and carbonization process of the aluminum alkoxide, so that nitrogen can enter conveniently, and the reaction is more thorough.

Description

technical field [0001] The invention relates to a method for preparing aluminum nitride by direct nitriding of aluminum alkoxide, belonging to the technical field of aluminum nitride preparation. Background technique [0002] Aluminum nitride is a covalent bond compound with a hexagonal wurtzite structure. It has comprehensive advantages such as high thermal conductivity, thermal expansion coefficient matching silicon, excellent mechanical properties, and non-toxicity. It has become an ideal substrate material for high-power electronic devices. And packaging materials, it has broad application prospects in power electronic devices, optoelectronic devices, microwave power devices and other fields. The performance of aluminum nitride ceramics is closely related to the properties of aluminum nitride powder. For example, when the content of impurities in aluminum nitride powder is too high, the sintering performance of aluminum nitride powder will be poor, and it is difficult to...

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Problems solved by technology

However, this method still has problems such as uneven mixing of raw materials, incomplete solid-gas reaction, high nitriding reaction temperature, long reaction time, and low loading capacity, resulting in low purity of the synthetic product aluminum nitride powder

In the method of the high-purity ultra-fine aluminum nitride powder provided by the patent application with the publication number CN109264680A, although the method of introducing nano-amorphous carbon in the aluminum isopropoxide hydrolysis process has improved the aluminum oxide and amorphous carbon in the traditional carbothermal reduction method It is difficult to mix evenly, but the reaction steps are complicated, and there is still room for improvement in the morphology, particle size distribution and purity of the obtained aluminum nitride

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