Additive for copper catalytic etching silicon wafer etching liquid, etching system and etching method

An additive and copper-catalyzed technology, applied in the field of solar photovoltaics, can solve the problems of fast reaction rate, uneven etching rate, and high loss of silicon materials, and achieve uniform and smooth structure, appropriate etching reaction rate, and weight reduction rate. The effect of low reflectivity

Pending Publication Date: 2021-08-24
KUNMING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to solve or partially solve the technical problems that the reaction rate of silicon wafers is too fast in the copper-catalyzed chemical etching process, the loss of silicon materials is large, and the etching rate is uneven, the present invention provides a method for copper-catalyzed etching of silicon wafers. Additives for etching solutions, including metal complexing agents, acidity regulators and water

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  • Additive for copper catalytic etching silicon wafer etching liquid, etching system and etching method
  • Additive for copper catalytic etching silicon wafer etching liquid, etching system and etching method

Examples

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Embodiment 1

[0029] An additive for copper catalyzed etching silicon chip etching solution, which is a solution including a metal complexing agent and an acidity regulator. Among them, the metal complexing agent (also known as metal chelating agent, metal chelating agent) can clathrate the metal ion into the complexing agent through the strong combination between the complexing agent molecule and the metal ion, and become stable and have a larger molecular weight. Compounds, thus preventing metal ions from acting, are commonly used in printing and dyeing, scale inhibition and other fields in industry. Based on the characteristic of the metal complexing agent, the present invention introduces it as an additive into the copper-catalyzed etching silicon wafer etching solution, and is used to control and slow down the etching reaction rate, so as to solve the problem that the reaction rate of the copper-catalyzed chemical etching method is too fast, making the silicon material The technical pr...

Embodiment 2

[0034] The etching system for copper-catalyzed etching of silicon wafers is obtained by mixing the additives in Example 1 with a copper-catalyzed etching solution, wherein the etching solution includes: metal copper salt, oxidizing agent, etchant and water.

[0035] In a preferred embodiment, the metal copper salt includes: one of copper nitrate, copper chloride or copper sulfate; the oxidizing agent includes: hydrogen peroxide or nitric acid; the etchant is hydrofluoric acid; preferably, the concentration of the metal copper salt The concentration of the etchant is between 0.01mol / L and 0.5mol / L, the concentration of the etchant is between 0.01mol / L and 0.5mol / L, and the concentration of the oxidizing agent is between 0.1mol / L and 3mol / L.

[0036] In a preferred embodiment, the mass ratio of the additive to the etching solution is 0.1-6:100, preferably 0.1-3.0:100. By adding a small amount of the additive of the present invention to the etching solution in the prior art, the ...

Embodiment 3

[0038] The etching method for silicon wafer texturing adopts the copper-catalyzed etching silicon wafer etching system obtained in Example 2, including: an etching step, immersing the silicon wafer in the etching system for etching.

[0039]In a preferred embodiment, the etching temperature is between 20°C to 70°C, preferably 30°C to 50°C, more preferably 40°C; the etching time is between 1min to 30min, preferably 3min to 15min, More preferably, it is 12 minutes. It can be seen that the formula provided in the preferred embodiment of the present invention can carry out the etching reaction at a temperature that is more gentle and easy to control, and the etching time is within half an hour, and the etching reaction rate is appropriate, which avoids etching If the etching reaction rate is too fast, the etching process is difficult to control, and the etching reaction rate is not too slow, so that the etching time is too long, resulting in an increase in the cost caused by low e...

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Abstract

The invention discloses an additive, an etching system and an etching method for an etching solution for copper catalytic etching of a silicon wafer; the additive comprises a metal complexing agent, an acidity regulator and water. The acidity regulator is selected from one or more of citric acid, acetic acid or phosphoric acid; the metal complexing agent is selected from one or more of ethylenediamine tetraacetic acid, salicylic acid or hexamethylenetetramine; and the etching system is prepared by mixing an additive and a copper catalytic etching solution. Compared with an etching solution without the additive, the etching solution obtained by the additive has the advantages that etching reaction conditions for etching and texturing a silicon wafer are milder, and the weight reduction rate of the silicon wafer is lower; the inverted pyramid spines on the surface of the prepared silicon wafer are reduced, the structure is more uniform and smoother, and the surface reflectivity of the silicon wafer can be further reduced; therefore, the technical scheme is especially suitable for the texturing process of the flaked silicon wafer in the future, and has industrial practical value.

Description

technical field [0001] The invention belongs to the field of solar photovoltaics, and in particular relates to an additive, an etching system and an etching method for copper-catalyzed etching silicon chip etching solution. Background technique [0002] Reducing costs and improving efficiency are the goals that the photovoltaic industry has been pursuing. The introduction of diamond wire slicing technology in the past few years has led to a sharp drop in the cost of silicon wafers. In order to further improve the performance and efficiency of silicon-based solar cells, it is necessary to use physical or chemical methods on silicon wafers. Nano- or micron-sized micro-structural suede is formed on the surface. Effective suede can increase the reflection and refraction times of incident light, reduce the surface reflectivity of silicon wafers, and improve the photoelectric conversion efficiency of solar cells. [0003] The inverted pyramid structure has attracted the attention ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K13/00H01L21/306H01L31/18
CPCC09K13/00C09K13/04H01L21/30604H01L31/1876Y02P70/50
Inventor 李绍元洪世豪马文会吕国强于洁万小涵
Owner KUNMING UNIV OF SCI & TECH
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