Method for improving interface characteristics of SiC device

Abstract

The invention discloses a method for improving interface characteristics of a SiC device. The method comprises the following steps: S1, coating the surface of a SiC device with a photoresist; S2, heating the SiC device; S3, performing high-temperature annealing on the SiC device; S4, cleaning the surface of the SiC device; S5, oxidizing the surface of the SiC device; S6, annealing the surface of the SiC device; S7, carrying out secondary oxidation on the surface of the SiC device; S8, performing ultraviolet irradiation; S9, cleaning the surface; and S10, testing the performance. According to the invention, when the method is used, the surface roughness of a SiC device is improved by coating the surface of the SiC device with a photoresist and carbonizing the surface of the SiC device to form a carbonized film, and after the SiC device is subjected to oxidation treatment, secondary oxidation treatment is carried out on the SiC device through a wet oxygen secondary oxidation method, so that the thickness of a transition region of the SiC device is reduced, and the content of components in the transition region is reduced; and when the device is used, the problems existing in the improvement process of the SiC device are recorded through multiple performance tests, and further improvement work is facilitated.

Description

technical field [0001] The invention relates to the technical field of improving SiC devices, in particular to a method for improving interface characteristics of SiC devices. Background technique [0002] Silicon carbide, also known as moissanite and corundum, is an inorganic substance with a chemical formula of SiC. It is smelted through a resistance furnace with raw materials such as quartz sand, petroleum coke (or coal coke), wood chips (salt is required to produce green silicon carbide), etc. Silicon carbide also has rare minerals in nature, moissanite, among the non-oxide high-tech refractory materials such as C, N, and B, silicon carbide is the most widely used and economical one, which can be called Emery or refractory sand, silicon carbide has two commonly used basic varieties of black silicon carbide and green silicon carbide, both of which belong to α-SiC, black silicon carbide contains about 95% SiC, its toughness is higher than that of green silicon carbide, and...

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Problems solved by technology

[0003] China's open invention: CN201811474382.6 discloses a method for improving the interface characteristics of SiC devices and SiC devices. The invention forms an oxide layer on a SiC substrate and breaks the chemical bonds of interface defects between SiC and the oxide layer by ultraviolet irradiation. Improve the interface characteristics of SiC devices, but this method cannot improve the transition region, and does not improve the surface roughness of SiC devices, and the improvement surface is relatively single. Therefore, a method for improving the interface characteristics of SiC devices is proposed

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