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Preparation equipment and preparation method of sputtering target material

A technology for sputtering target materials and equipment, which is applied to the preparation equipment of sputtering target materials and the field of preparation thereof, can solve the problems of non-dense structure, preparation of blanks, and difficulty in effectively controlling oxygen content, and achieves the reduction of impurities and impurity content. Increase, reduce the increase of impurity content, the effect of preventing impurity pollution

Active Publication Date: 2021-06-15
CHANGSHA HUAISHI NEW MATERIAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004]In the prior art, high-vacuum melting technology is used to prepare high-purity target materials, which can be used to prepare single-metal target blanks with simple structure; It is suitable for preparing refractory metal targets, but it is difficult to effectively control the oxygen content, which makes the oxygen content of the metal targets too high
When the multi-element alloy target is prepared by ordinary vacuum melting technology, due to the fusion of multi-component elements, the interaction and interaction between elements, phases and phases, and the characteristics of intermetallic compounds in the alloy, it is easy to cause high impurity content, Defects such as element segregation, non-dense structure and brittle billets make it difficult to prepare qualified billets for multi-element alloy targets through conventional smelting techniques

Method used

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  • Preparation equipment and preparation method of sputtering target material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0068] A high-purity metal material smelting equipment, which includes a closed cavity 1, a smelting and pouring device 2, a casting and molding device 3, an atmosphere treatment device and other auxiliary facilities to ensure the normal operation of the equipment; wherein the smelting and pouring device 2 and the casting and molding device 3 In the closed cavity, the atmosphere treatment device is composed of a circulating atmosphere device 4, an atmosphere cleaning device 5, an atmosphere temperature control device 6 and a vacuum extraction device 7, which are connected to the closed cavity and provide a protective atmosphere.

[0069]The smelting and pouring device consists of four parts: a crucible 8, a smelting heating device 9, a crucible rotating device 10 and a melt stirring device 11, wherein:

[0070] The smelting heating device 9 is a high-frequency induction coil heating device, the melt stirring device 11 is an electromagnetic stirrer device, the crucible is a wate...

Embodiment 2

[0080] The slab mold is a conventional carbon steel mould. The slab mold 12 is not cooled by circulating cooling water. After the melt is poured into the mould, it is normally cooled by a protective atmosphere; the slab heat preservation device 16 is heated by resistance wire, and the rated temperature is ≤ 900°C, temperature accuracy ±5°C; Other devices are the same as in Embodiment 1.

[0081] Through this set of equipment, pure cerium is smelted and pressure cast. The raw material is high-purity cerium with a purity of ≥99.995%. After adding raw materials into the crucible, the atmosphere in the chamber is pre-evacuated by a vacuum pump, so that the vacuum degree in the furnace is 5×10 -3 Below Pa, then fill it with high-purity argon, so that the air pressure in the cavity is 800mbar, and the oxygen partial pressure is less than 0.0001Pa; the raw material is heated by high-frequency induction until it is fully melted, and kept for 10 minutes, and the melt is electromagnet...

Embodiment 3

[0083] The slab mold is a heat-resistant (600°C) stainless steel mold, the slab mold 12 is not cooled by circulating cooling water, and is normally cooled by a protective atmosphere after the melt is poured into the mould; the slab heat preservation device 16 is heated by resistance wire Mode, rated temperature ≤ 1300 ℃, temperature accuracy ± 5 ℃;. Other devices are the same as in Embodiment 1.

[0084] Through this set of equipment, the Al-50Sc alloy is smelted and pressure-cast. The raw materials are high-purity aluminum and high-purity scandium, the purity of which is ≥99.995%. After adding raw materials into the crucible, the atmosphere in the chamber is pre-evacuated by a vacuum pump, so that the vacuum degree in the furnace is 5×10 -3 Below Pa, then fill it with high-purity argon, so that the air pressure in the cavity is 800mbar, and the oxygen partial pressure is less than 0.0001Pa; the raw material is heated by high-frequency induction until it is fully melted, and...

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Abstract

The invention discloses preparation equipment and a preparation method of a sputtering target material. The preparation equipment comprises a closed cavity, a smelting and pouring device, a casting and forming device and an atmosphere treatment device; the smelting and pouring device and the casting and forming device are positioned in the closed cavity; the atmosphere treatment device is connected with the closed cavity through a pipeline; and a protective atmosphere is conveyed to the closed cavity. Through the combined action of the smelting device, the casting and forming device and the atmosphere cleaning device, unnecessary pollution caused by processing links in the smelting, stirring, cooling and molding processes is reduced, good conditions such as proper temperature, cooling speed, pressure and atmosphere are provided for material preparation, the impurity content of the prepared high-purity material can be effectively controlled in the whole preparation process, and the high-purity material can be uniformly fused and controllably cooled and formed.

Description

technical field [0001] The invention relates to a sputtering target preparation equipment and a preparation method thereof, belonging to the technical field of metal material preparation. Background technique [0002] High-purity sputtering targets mainly refer to metal or non-metal targets with a purity of 99.9%-99.9999% (between 3N-6N), which are key materials for preparing electronic thin films on surfaces such as panels, wafers, and solar cells. Among them, semiconductor wafers and chips have the highest technical requirements for sputtering targets. Since the quality of the sputtering target directly affects the uniformity and performance of the wafer's conductive layer and barrier layer, which in turn affects the transmission speed and stability of the entire chip, the target is one of the core raw materials for semiconductor production. [0003] There are extremely strict standards for the purity of metal materials and internal microstructure of sputtering targets fo...

Claims

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Application Information

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IPC IPC(8): C23C14/34B22D47/00B22C9/22B22D27/04B22D27/11B22D21/02B22D46/00C21D1/26F27B14/04F27B14/06F27B14/08F27D27/00
CPCC23C14/3414B22D47/00B22C9/22B22D27/04B22D27/11B22D21/02B22D46/00C21D1/26F27B14/04F27B14/06F27B14/08F27D27/00F27B2014/045
Inventor 邱从章
Owner CHANGSHA HUAISHI NEW MATERIAL TECH CO LTD
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