Production process of silicon carbide titanium

Abstract

The invention relates to a production process of silicon carbide titanium, which comprises the following steps of filling sponge titanium and monocrystalline silicon into a vacuum induction melting furnace, continuously heating until the sponge titanium and the monocrystalline silicon are remelted, and stopping vacuumizing, after argon is filled, conducting stirring, pouring and mold fixing, and acquiring a titanium-silicon alloy ingot, processing the titanium-silicon alloy ingot into titanium-silicon alloy powder, filling titanium-silicon alloy powder and graphite powder into a vacuum ball mill, adding an adhesive, ball-milling and mixing for 24 hours under the protection of argon, pressing into a round cake by using a press, filling into a crucible of a vacuum resistance furnace, vacuumizing, heating to 1100 DEG C, keeping the vacuum degree to 25 Pa, preserving the heat for 3.5 hours, continuously heating to 1350 DEG C, keeping the vacuum degree to 25-350 Pa, preserving the heat, fully alloying, filling argon, continuously heating to 1520 DEG C, and preserving heat for 3 hours to obtain a Ti3SiC2 block material. The method has the advantages of primary raw material taking, low cost, no need of deep processing, low temperature requirement in the whole reaction process, good product purity, and realization of large-scale industrial production.

Description

technical field [0001] The invention belongs to the field of preparation of ceramic materials, in particular to a production process of silicon carbide titanium. Background technique [0002] Titanium silicon carbide is a new type of ternary layered ceramic material, which has the composite properties of metal and ceramics. It not only has the mechanical properties of metal, but also has good electrical conductivity, thermal conductivity and high temperature plasticity. It can be used at high speed like metal. Steel cutting tools are used for mechanical processing; it also has the high melting point, thermal shock resistance and oxidation resistance of ceramic materials, and its thermal stability can reach 1300 ° C. It has a lower friction coefficient and better self-lubricating performance than graphite. Titanium silicon carbide is widely used in sliding electrical contact parts in electromechanical engineering, electronic packaging radiators in the electronics industry, an...

AI Technical Summary

Problems solved by technology

Chemical vapor phase synthesis is the use of SiCl 4 、TiCl 4 , CCl 4 As a raw material in a vapor deposition furnace, Ti is deposited by vapor deposition 3 SiC 2 ; The reaction conditions of the vapor deposition method are relatively harsh, and the product purity is not easy to control and easy to form impurity phases, and the product output is small, which is not conducive to industrial production

The pressing and sintering method is to use the mixed powder of Ti, SiC and graphite to be cold-pressed and then reacted at 1600°C under a pressure of 40 MPa. In this method, SiC is used as a raw material, and silicon carbide has a high hardness. It takes a long time to pulverize the powder to obtain it, and The loss is large; and the chemical stability of silicon carbide is high, the sintering requires high temperature, and SiC impurity phases are easy to exist in the product, the whole production process is complicated and the cost is high

Images