Preparation method for copper-indium-gallium alloy powder

A technology of copper indium gallium alloy and copper indium gallium, which is applied in the field of alloy powder manufacturing, can solve the problems of increasing energy consumption cost and production cost, prolonging the preparation cycle of alloy powder, and burning loss of low melting point metal elements, so as to reduce energy consumption cost , Extensive use of value, the effect of reducing waste

Pending Publication Date: 2019-12-24
MIASOLE EQUIP INTEGRATIONFUJIANCO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

And because the melting point of copper is the highest, in order to make it melt fully, it is necessary to raise the temperature of the alloy liquid to 1100°C, and keep the molten metal at a certain temperature for a period of time, too high melting temperature and too long melting time, it is easy to make Part of the low-melting point metal elements are burned, which will cause the alloy composition to shift, the product performance will be unstable, and the preparation cycle of the alloy powder will be prolonged, which will also increase the energy consumption cost and production cost

Method used

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  • Preparation method for copper-indium-gallium alloy powder
  • Preparation method for copper-indium-gallium alloy powder
  • Preparation method for copper-indium-gallium alloy powder

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preparation example Construction

[0032] According to some preferred embodiments of the present invention, the preparation method of copper indium gallium alloy powder includes:

[0033] Copper, indium, gallium, and recovered copper indium gallium alloy powders whose particle size is not within the set range are smelted into an alloy solution in a melting crucible. In this smelting step, indium and gallium are placed at the bottom of the melting crucible, and the copper particles are Mix it with the recovered copper indium gallium powder whose particle size is not within the set range and place it above the indium and gallium in the smelting crucible;

[0034] Atomizing, cooling, and sieving the alloy solution to obtain copper indium gallium alloy powder with a particle size within a set range;

[0035] Copper indium gallium alloy powder whose particle size is not within the set range is recovered.

[0036] The metal copper material needs to use granular materials, copper of equal quality, the smaller the par...

Embodiment approach

[0044] According to some preferred embodiments of the present invention, the atomized pulverization process includes:

[0045] Pour the alloy solution into the preheated tundish;

[0046] Introduce atomized gas for powder making operation;

[0047] Sieve to collect copper indium gallium alloy powder with a particle size within a set range;

[0048] Copper indium gallium alloy powder whose particle size is not within the set range is recovered.

[0049] According to some preferred embodiments of the present invention, the preheating temperature is 750-770°C.

[0050] According to some preferred embodiments of the present invention, the atomizing gas is nitrogen, argon, helium, the pressure is 2MPa-2.5Mpa, and the gas flow rate is 18kg / min-20kg / min.

[0051] According to the copper indium gallium alloy powder obtained by the above method of the present invention, the proportion of copper indium gallium in its composition is: (20%-50%): (15%-40%): (5%-30%) (by mass count). The...

Embodiment 1

[0072] As shown in Example 1 in Table 1, 26 kg of copper particles with a size of 10 mm are used, which are fully mixed with 65 kg of CIG alloy powder with a particle size of less than 38 μm and greater than 150 μm in advance, and then as figure 1 As shown in middle 2, indium and gallium are placed at the bottom of the melting crucible 1, and the above-mentioned copper particles and CIG mixture are placed as figure 1 3 is placed above the indium and gallium in the melting crucible 1 . Among them, the feeding ratio of copper, indium and gallium is 40%: 40%: 20%, the melting temperature is 915°C, the vacuum degree is 0.2mbar, all metals can be completely alloyed in 51 minutes of melting, and the pouring temperature is 810±10 ℃, the tundish temperature is 760±10℃, the nitrogen pressure is 2±0.05Mpa, and the nitrogen flow rate is 19.2±0.2. The composition detection results of the obtained CIG alloy powder are 39.83%, 40.13%, and 20.04% for copper, indium, and gallium, respectivel...

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Abstract

The invention relates to a preparation method for copper-indium-gallium alloy powder. The preparation method comprises the steps that copper, indium, gallium and recovered copper-indium-gallium alloypowder with the particle size not within the set range are molten into an alloy solution in a smelting crucible; the alloy solution is atomized, cooled and screened to obtain the copper-indium-galliumalloy powder with the particle size within the set range; copper-indium-gallium alloy powder with the particle size not within the set range is recovered; and wherein in the smelting step, indium andgallium are put at the bottom of the smelting crucible, and after mixed, copper particles and the recovered copper-indium-gallium powder with the particle size not within the set range are put on theindium and gallium in the smelting crucible. Through the preparation method, the smelting temperature is lowered, thus component deviation in the copper-indium-gallium alloy powder is avoided, the preparation period of the alloy powder is shortened, and constituent stability and production efficiency of the copper-indium-gallium alloy powder are improved.

Description

technical field [0001] The invention relates to the field of alloy powder production, in particular to a method for preparing copper indium gallium (CIG) alloy powder used in CIGS thin film solar cells. Background technique [0002] Copper indium gallium (CIGS) thin-film solar cells are compound semiconductors with a chalcopyrite structure composed of four elements: copper, indium, gallium and selenium. Long, high power generation, low production costs and short energy recovery cycle and other advantages. Copper indium gallium selenide thin film solar cell has a multi-layer structure, including metal grid electrode, antireflection film, window layer (ZnO), transition layer (CdC), light absorption layer (CIGS), metal back electrode (Mo), glass lining Bottom etc. Among them, the absorption layer CIGS is the key material of the thin film battery. Using magnetron sputtering technology to prepare CIGS absorption layer is the current mainstream technology, and this will use cop...

Claims

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Application Information

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IPC IPC(8): B22F9/08C22C1/02C23C14/34
CPCB22F9/082B22F2009/0848C22C1/02C23C14/3414B22F9/08C23C14/34
Inventor 张蛟万捷徐国军雷贵先黄喜南王云能吴福忠翁辉林毅捷蔡爱玲
Owner MIASOLE EQUIP INTEGRATIONFUJIANCO LTD
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