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Manufacturing method of quantum dot substrate

A technology of substrate production and quantum dots, which is applied in the fields of final product manufacturing, sustainable manufacturing/processing, identification devices, etc., can solve the problems of complex preparation process, lower production costs, and high requirements for the stability of quantum dot colloids

Active Publication Date: 2021-05-18
SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Abstract
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Problems solved by technology

The existing methods to realize the patterned distribution of the quantum dot layer are mainly inkjet printing technology and yellow photolithography technology. These methods have high requirements on the stability of the quantum dot colloid, and the preparation process is relatively complicated, and it needs to be removed by etching. Part of the quantum dot layer, resulting in low utilization of quantum dot materials, which is not conducive to reducing production costs

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  • Manufacturing method of quantum dot substrate
  • Manufacturing method of quantum dot substrate
  • Manufacturing method of quantum dot substrate

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Embodiment Construction

[0050] The following descriptions of the various embodiments refer to the accompanying drawings to illustrate specific embodiments in which the invention may be practiced. The directional terms mentioned in the present invention, such as [top], [bottom], [front], [back], [left], [right], [inside], [outside], [side], etc., are only for reference The orientation of the attached schema. Therefore, the directional terms used are used to illustrate and understand the present invention, but not to limit the present invention. In the figures, structurally similar elements are denoted by the same reference numerals.

[0051] The embodiment of the present invention provides a method for manufacturing a quantum dot substrate. In the method, an electrode layer arranged in an array is arranged on the substrate, and the electric field generated after the electrode layer is energized is used to drive the quantum dots in the quantum dot mixture. The material is orientedly gathered on the e...

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Abstract

The invention provides a manufacturing method of a quantum dot substrate. The manufacturing method comprises the following steps: manufacturing an electrode layer on a substrate; coating the substrate with a mixed solution containing quantum dots, and covering the electrode layer; electrifying the electrode layer, wherein the quantum dots in the mixed solution are gathered on the electrode layer under the driving of an electric field, and a quantum dot layer is formed; removing substances except the quantum dots in the mixed solution, and obtaining the quantum dot substrate. The electric field generated after the electrode layer is electrified is utilized to drive the quantum dot material to directionally deposit, so that patterning of the quantum dot layer is realized, the manufacturing process of the quantum dot substrate is simplified, the utilization rate of the quantum dot material is improved, and the manufacturing cost is reduced.

Description

technical field [0001] The invention relates to the field of display technology manufacturing, in particular to a method for manufacturing a quantum dot substrate. Background technique [0002] Quantum dot is a kind of ultra-small size semiconductor material with direct bandgap transition and luminescence, which has quantum size effect. At present, quantum dot luminescence technology has been widely used in display devices. The more common one is the production of color filters in display panels, which mainly use the spectral concentration, high color purity, high brightness and good stability of quantum dot luminescence. It has a significant effect on improving the optical properties of display devices, increasing brightness and color gamut, and reducing energy consumption. [0003] Common quantum dot substrates, such as quantum dot color film substrates, quantum dot light guide plates, quantum dot light-emitting diode substrates, etc., need to realize the patterned distri...

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Application Information

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IPC IPC(8): G09F9/30G09F9/33
CPCG09F9/30G09F9/33Y02P70/50
Inventor 周淼赵金阳
Owner SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
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