Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

An Oxide Light Emitting Field Effect Transistor

A field-effect transistor and oxide semiconductor technology, applied in the field of oxide light-emitting field-effect transistors, can solve the problem that the light-emitting effect of light-emitting field-effect transistors is not very ideal, and achieve good optical transmittance, low process temperature, and good electrical performance. Effect

Active Publication Date: 2022-05-10
SOUTH CHINA UNIV OF TECH
View PDF15 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But the luminous effect of the luminescent field effect transistor in the prior art is not very ideal yet.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • An Oxide Light Emitting Field Effect Transistor
  • An Oxide Light Emitting Field Effect Transistor
  • An Oxide Light Emitting Field Effect Transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] An oxide light-emitting field effect transistor is provided with a substrate, a gate, an insulating layer, an active layer, a source electrode and a drain electrode, and the oxide semiconductor material doped with rare earth elements is used as the active layer. Wherein the thickness of the active layer is 5nm-600nm.

[0035] The rare earth element in the present invention is at least one of Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm or Yb. Moreover, the content of the rare earth element in the active layer is 0.2%-60% in mole percentage.

[0036] The oxide semiconductor material of the present invention is at least one of zinc oxide, indium oxide, gallium oxide, tin oxide or titanium oxide.

[0037] The structure that can be obtained in the present invention is Figure 1 to Figure 5 Light emitting field effect transistor structure. in figure 1 with figure 2 The source electrode and the drain electrode are respectively in contact with the top of the active lay...

Embodiment 2

[0041] An oxide light-emitting field effect transistor, other features are the same as those of Embodiment 1, and also has the following features: the preparation method of the active layer 4 is a vacuum method, and the heat treatment temperature of the active layer 4 is above 500°C.

[0042] It should be noted that the rare earth-doped oxide thin film can be crystallized only when the heat treatment temperature of the active layer 4 is above 500° C., so as to excite the characteristic luminescence originating from the rare earth ions.

[0043] A specific preparation method of the active layer 4 is to use a rare earth-doped oxide semiconductor material ceramic target to perform radio frequency sputtering on the surface of the insulating layer 3 to prepare a patterned active layer 4 . Wherein the power of radio frequency sputtering is 60W-200W, and the substrate temperature during deposition is 100°C-200°C.

[0044] Wherein, the preparation method of the drain electrode 6 is to...

Embodiment 3

[0051]An oxide light-emitting field effect transistor, other features are the same as those of Embodiment 1, and also has the following features: the preparation method of the active layer 4 of the present invention is a solution method, and the heat treatment temperature of the active layer 4 is 50°C-1200°C.

[0052] The specific preparation method of the active layer 4 is to perform oxygen plasma treatment on the surface of the insulating layer 3, and then spin-coat the rare earth element-doped oxide nanocrystalline material prepared by the sol-gel solvothermal method on the surface of the insulating layer 3, Then heat treatment is performed under an oxygen atmosphere to obtain the active layer 4 .

[0053] The oxide light emitting field effect transistor of the present invention can realize electroluminescence in ultraviolet, visible and infrared regions when gate voltage and drain voltage are applied.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

An oxide light-emitting field effect transistor is provided with a substrate, a gate, an insulating layer, an active layer, a source electrode and a drain electrode, and the oxide semiconductor material doped with rare earth elements is used as the active layer. The rare earth element is at least one of Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm or Yb. The oxide light emitting field effect transistor of the present invention can realize electroluminescence in ultraviolet, visible and infrared regions when gate voltage and drain voltage are applied. Moreover, the oxide light-emitting field effect transistor of the present invention has the advantages of high mobility, low process temperature, good electrical performance and good optical transparency due to the doping of rare earth elements.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an oxide light emitting field effect transistor. Background technique [0002] Light-emitting field-effect transistors are new optoelectronic devices that integrate the switching control capabilities of field-effect transistors and the electroluminescent capabilities of light-emitting diodes. As a new multifunctional optoelectronic device, light-emitting field-effect transistors have important application prospects in the fields of flat panel display, integrated optoelectronics, electrically pumped lasers and new optocouplers. Compared with the display technology based on field effect transistor driven OLED, the display technology based on light-emitting field effect transistor has simpler manufacturing process and higher integration, and is regarded as a strong competitor of the next generation display technology. [0003] At the same time, due to the characteristics of ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/26H01L33/28
CPCH01L33/0041H01L33/26H01L33/285
Inventor 兰林锋吴永波林奕龙彭俊彪
Owner SOUTH CHINA UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com