Method for leading out electrical properties of mercury cadmium telluride pn junction and detector chip
An electrical performance, mercury cadmium telluride technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of poor response consistency of detector chips, affecting the effect of electrode ohmic contact, affecting working voltage, etc., to improve the response. Consistency, Enhanced Effect, Enhanced Effect of Depth Uniformity
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[0032]The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.
[0033]The present invention provides a method for eliciting electrical properties of mercury cadmium telluride pn junction, such asfigure 1 As shown, including the following steps:
[0034]S101, sequentially forming a cadmium telluride layer and a zinc sulfide layer on the surface of the mercury cadmium telluride wafer; the pn junction has been prepared inside the mercury cadmium telluride wafer;
[0035]It is understandable that the present inventio...
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