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Anti-ferroelectric ceramic material and low-temperature sintering method thereof

A ceramic material, low temperature sintering technology, applied in the field of functional ceramics, can solve problems such as increasing the manufacturing cost of multilayer capacitors, and achieve the effect of simple, economical and practical preparation method

Active Publication Date: 2020-12-11
TONGJI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, even if the antiferroelectric ceramics obtained at high sintering temperature have high energy storage density, the sintering temperature of 1200 °C will greatly increase the manufacturing cost of multilayer capacitors in practical applications.

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  • Anti-ferroelectric ceramic material and low-temperature sintering method thereof
  • Anti-ferroelectric ceramic material and low-temperature sintering method thereof
  • Anti-ferroelectric ceramic material and low-temperature sintering method thereof

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Embodiment 1

[0036] In this embodiment, the general chemical formula is PbZrO 3 The antiferroelectric ceramic material, the sintering aid is Ag 2 O powder, its preparation method comprises the following steps:

[0037] 1) Select Pb with a purity greater than 99% 3 o 4 , ZrO 2 As the raw material of the antiferroelectric ceramic material, it is weighed and mixed according to the chemical composition to obtain the mixture;

[0038] 2) After the mixture is ball milled for 15 hours, discharged, dried, and calcined at 900°C for 3 hours, calcined powder is obtained;

[0039] 3) The calcined powder and 0.5wt.% Ag 2 After O mixing, after secondary ball milling, discharging and drying, dry powder is obtained;

[0040] 4) Mix the dry powder with 8wt% polyvinyl alcohol solution (the mass-to-volume ratio of the mixing process is 0.3mL polyvinyl alcohol solution / g dry powder), and then successively undergo granulation and compression molding at 6MPa to obtain a ceramic embryo body;

[0041] 5) Pl...

Embodiment 2

[0043] In this example, the antiferroelectric ceramic materials prepared in Example 1 and Comparative Example 1 were characterized by XRD, SEM, and dielectric spectrum, and the characterization results were as follows: Figure 1 to Figure 3 shown.

[0044] From figure 1 It can be seen that the antiferroelectric ceramic materials prepared in Example 1 all have a single perovskite structure. Moreover, the splitting of the peak near 38° and the splitting of the peak near 44° (three splitting peaks) indicate that the antiferroelectric ceramic prepared in Example 1 has an orthorhombic phase structure. In addition, comparative example 1 is pure PbZrO 3 For ceramics, its XRD pattern is given in a standard PDF card (PDF#87-0569). figure 1 It can be seen from the figure that the position of each diffraction peak in Example 1 is basically consistent with that of Comparative Example 1 (in fact, it only shifts to the high angle by about 0.04°), indicating that the externally doped Ag ...

Embodiment 3

[0048] In this example, the antiferroelectric ceramic materials prepared in Example 1 and Comparative Example 1 were respectively polished with sandpaper of different sizes to obtain a thin ceramic sheet with a smooth surface and a thickness of 0.1mm, and then sprayed the thin ceramic sheet Gold, to obtain a gold electrode with a diameter of 2 mm, and then put the gold electrode in a muffle furnace for heat treatment, that is, bake it at 200 ° C for 0.5 h, and obtain the corresponding samples to be tested.

[0049] Characterize the energy storage performance of the two samples to be tested, such as Figure 4 and Figure 6 is the hysteresis loop of the sample to be tested, such as Figure 5 and Figure 7 Shown is a comparison chart of energy storage density and energy storage efficiency calculated based on the hysteresis loop. It can be seen from the figure that the breakdown electric field strength of the sample to be tested in Example 1 is 330kV / cm, and the maximum polariza...

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Abstract

The invention relates to an anti-ferroelectric ceramic material and a low-temperature sintering method thereof. The chemical general formula of the anti-ferroelectric ceramic material is PbZrO3. Ag2Opowder is added into anti-ferroelectric ceramic material powder in the secondary ball milling process, and a compact ceramic body is prepared by regulating and controlling the content of Ag2O, compensating lead atmosphere in the sintering process and the like. The sintering temperature of the system is as low as 1050 DEG C, the prepared ceramic body is relatively good in ceramic forming property,and the double ferroelectric hysteresis loop of the PbZrO3 antiferroelectric ceramic at room temperature is obtained. Compared with the prior art, the dielectric material prepared by the invention hasthe advantages of high energy storage density (8.82 J / cm<3>), higher energy storage efficiency (71.71%) and the like, and has very important significance for developing pulse power capacitors with high energy storage density and low-temperature firing capability.

Description

technical field [0001] The invention relates to the technical field of functional ceramics, in particular to an antiferroelectric ceramic material and a low-temperature sintering method thereof. Background technique [0002] With the advancement of science and technology, pulse power technology has been widely used in various fields such as industry, construction, biomedicine and cutting-edge technology. As an important energy storage component of pulse power devices, capacitors account for a large proportion of pulse power devices. As the long-term development direction of the industry, the development of pulse capacitors with high energy storage density, large discharge current and high power density has become the current pulse power technology. The focus and urgent task of field research. The current preferred dielectric materials for pulse capacitors mainly include linear ceramics, ferroelectric ceramics and antiferroelectric ceramics. Linear ceramics have the charact...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/48C04B35/622C04B35/638C04B35/64
CPCC04B35/48C04B35/622C04B35/638C04B35/64C04B2235/3296C04B2235/6562C04B2235/6567
Inventor 翟继卫葛广龙黄凯威沈波
Owner TONGJI UNIV
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