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A silicon photocathode modified with tungsten sulfide nanoparticles and its preparation method

A nanoparticle and photocathode technology, applied in electrodes, nanotechnology, electrolytic components, etc., can solve the problems of uneven deposition thickness, low deposition rate, and high preparation cost, and achieve great application potential, low reagent cost, and tight interface bonding. Effect

Active Publication Date: 2022-01-18
NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although silicon photocathodes with satisfactory photocatalytic properties can occasionally be obtained, these technological approaches suffer from the disadvantages of very low deposition rates, non-uniform deposition thicknesses, and high fabrication costs.

Method used

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  • A silicon photocathode modified with tungsten sulfide nanoparticles and its preparation method
  • A silicon photocathode modified with tungsten sulfide nanoparticles and its preparation method
  • A silicon photocathode modified with tungsten sulfide nanoparticles and its preparation method

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Embodiment 1

[0018] A silicon photocathode modified with tungsten sulfide nanoparticles and a preparation method thereof, comprising the following steps:

[0019] Cut the p-type single crystal silicon into a square sample with a side length of 1cm with a glass knife, place it in a mixed solution of 10mL concentrated sulfuric acid and 5mL hydrogen peroxide at 60 o C cleaning for 40 minutes, followed by etching with 2.0% hydrofluoric acid for 10 minutes to obtain bare silicon without an oxide layer; dissolving 2.0 mmol of ammonium thiotungstate in 10 mL of water to prepare a 0.2M ammonium thiotungstate solution, and then Take 0.05mL of the ammonium thiotungstate solution and drop it into 10mL of 5.0% hydrofluoric acid solution to prepare a 1.0mM ammonium thiotungstate mixed hydrofluoric acid solution, and place the above-mentioned p-type monocrystalline silicon without oxide layer on the In this solution for 5min, thereafter washed with a large amount of ultrapure water and dried with argon ...

Embodiment 2

[0021] A silicon photocathode modified with tungsten sulfide nanoparticles and a preparation method thereof, comprising the following steps:

[0022] Cut the p-type single crystal silicon into a square sample with a side length of 1cm with a glass knife, place it in a mixed solution of 10mL concentrated sulfuric acid and 5mL hydrogen peroxide at 60 o C for 40 minutes, then etched with 5.0% hydrofluoric acid for 5 minutes to obtain bare silicon without an oxide layer; take 1.0 mmol of ammonium thiotungstate dissolved in 10 mL of water to prepare a 0.1M ammonium thiotungstate solution, and then Take 0.02mL of the ammonium thiotungstate solution and drop it into 10mL of 6.0% hydrofluoric acid solution to prepare a 0.2mM ammonium thiotungstate mixed hydrofluoric acid solution, and place the above-mentioned p-type single crystal silicon without oxide layer on the 20min in this solution, thereafter wash with a large amount of ultrapure water and dry with argon, make such as figure ...

Embodiment 3

[0024] A silicon photocathode modified with tungsten sulfide nanoparticles and a preparation method thereof, comprising the following steps:

[0025] Cut the p-type single crystal silicon into a square sample with a side length of 1cm with a glass knife, place it in a mixed solution of 10mL concentrated sulfuric acid and 5mL hydrogen peroxide at 60 o C for 40 minutes, followed by etching with 3.0% hydrofluoric acid for 5 minutes to obtain bare silicon without an oxide layer; take 1.0 mmol of ammonium thiotungstate dissolved in 10 mL of water to prepare a 0.1M ammonium thiotungstate solution, and then Take 0.01mL of the ammonium thiotungstate solution and drop it into 10mL of 8.0% hydrofluoric acid solution to prepare a 0.1mM ammonium thiotungstate mixed hydrofluoric acid solution, and place the above-mentioned p-type single crystal silicon without oxide layer on the 20min in this solution, thereafter wash with a large amount of ultrapure water and dry with argon, make such as ...

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Abstract

The invention discloses a silicon photocathode modified with tungsten sulfide nanoparticles and a preparation method thereof, which belongs to the field of photoelectric catalytic semiconductor materials. The preparation process is simple and easy to operate, and the conditions are mild and controllable. Concentration and reaction time are controlled, and raw material cost and preparation efficiency are all superior to prior art. The present invention specifically includes: using the solution of soluble thiotungstate as the reaction raw material, and using the hydrofluoric acid solution as the reaction medium, under normal temperature conditions, the surface of the silicon chip that has been treated by fluorination etching is treated with hydrofluoric acid The oxidation-reduction effect of thiotungstate ions in the medium, in-situ deposition of tungsten sulfide nanoparticles on the surface of silicon wafers, and the preparation of silicon photocathode with uniformly deposited ultra-thin tungsten sulfide nanoparticle films.

Description

technical field [0001] The invention belongs to the field of photoelectric catalysis semiconductor materials, and in particular relates to a silicon photocathode modified with tungsten sulfide nanoparticles and a preparation method thereof. Background technique [0002] Photocatalytic pure water splitting and carbon dioxide reduction is a very effective way to develop and convert solar energy, and the key and most basic factor in determining the photocatalytic performance is the need to use a suitable and effective semiconductor photocathode. Among many semiconductors, silicon, which is abundant and cheap, is the most promising small bandgap semiconductor (1.12eV), whose bandgap absorption almost perfectly matches the near-infrared light and visible light in the solar spectrum The energy band structure can fully meet the requirements of the semiconductor conduction band position for photocatalytic pure water splitting and carbon dioxide reduction. However, the photoelectroc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25B1/55C25B1/04C25B3/26C25B3/21C25B11/04C25B11/091B82Y40/00
CPCC25B1/04B82Y40/00Y02E60/36
Inventor 林惠文常焜秦亚雷徐旺韩文君
Owner NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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