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Semiconductor sensor for virus detection as well as preparation method and application thereof

A virus detection and semiconductor technology, applied in the field of biochemical sensing, can solve the problems of long detection time, difficult to popularize, and low convenience, and achieve the effects of fast detection speed, efficient popularization, and improved reliability and convenience.

Active Publication Date: 2020-11-20
HUAZHONG UNIV OF SCI & TECH +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] Aiming at the problems of long detection time, low convenience and difficulty in popularization in existing virus detection methods, the purpose of the present invention is to provide a semiconductor sensor for virus detection and its preparation method and application. Introduce virus-specific antigens or antibodies on the surface of the material, design and prepare virus detection sensors based on electrochemical electrodes, field effect transistors and other structures, and convert the charge transfer caused by the binding reaction between virus antigens and antibodies into sensor electrical signals through the semiconductor sensitive effect Output, which can detect antigens and antibodies on the spot at the same time, improve the real-time and convenience of virus detection, especially suitable for rapid on-site screening of asymptomatic virus-infected patients and dynamic monitoring of large-scale populations

Method used

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  • Semiconductor sensor for virus detection as well as preparation method and application thereof
  • Semiconductor sensor for virus detection as well as preparation method and application thereof

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Embodiment 1

[0035] (1) Preparation of lead sulfide (PbS) quantum dot materials. Specifically, 1.8 g of lead oxide, 6 mL of OA, and 20 mL of octadecene (ODE) were stirred in a three-necked flask at high speed, and the temperature of the precursor was raised to 120° C. after vacuuming. In the glove box, 280 μL of bis(trimethylsilyl)sulfide was dissolved in 10 ml of ODE with a pipette gun to prepare a sulfur precursor. The sulfur precursor was quickly injected into the lead precursor in a nitrogen environment, reacted for 30 seconds and then placed in a cold water bath for rapid cooling. The precipitate was collected, washed several times with methylpropionetone, centrifuged to collect the precipitate, and vacuum-dried to obtain PbS quantum dots.

[0036] (2) Disperse the PbS quantum dots in n-octane to obtain a PbS colloidal quantum dot solution with a concentration of 10-50 mg / mL, and drop 0.5 μL of the above-mentioned PbS quantum dots onto the working electrode of the planar three-electr...

Embodiment 2

[0040] (1) Preparation of tin sulfide (SnS) quantum dot materials. Specifically, take 1mM stannous chloride (SnCl 2 ), 5mL oleic acid, and 5mL octadecene were stirred in a three-necked flask at high speed, and heated to 120 degrees Celsius for 30 minutes to vacuumize the precursor. -1 Raise the temperature to 150°C, inject 0.5mL of 1-dodecanethiol (DDT), continue heating to 180°C, and dissolve 1mM thioacetamide in 2mL of oleylamine to prepare a sulfur precursor. The sulfur precursor was quickly injected into the tin precursor at 180° C. under a nitrogen atmosphere, reacted for 30 min, and then cooled to room temperature. Wash with ethanol several times, collect the precipitate by centrifugation, and dry in vacuum to obtain SnS quantum dots.

[0041] (2) Select phosphate buffer, add SnS quantum dots, add 3-mercaptopropionic acid (3-MPA) to replace the organic ligands on the surface of the quantum dots, and then use EDC as a cross-linking agent to specifically detect the antig...

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Abstract

The invention belongs to the technical field of biochemical sensing, and discloses a semiconductor sensor for virus detection as well as a preparation method and an application thereof. The preparation method comprises the steps of (1) preparing an oxide or chalcogenide colloid semiconductor nano-material; (2) coating the surface of the colloid semiconductor nano material with a virus specific antigen or antibody to obtain a sensitive material; and (3) based on the sensitive material, preparing the virus detection sensor by adopting device structures such as a chemically modified electrode ora field effect transistor. The virus specific antigen or antibody is introduced to the surface of the colloid semiconductor nano material, charge transfer caused by a specific binding reaction betweenthe virus antigen and antibody is converted into a sensor electric signal to be output through a semiconductor sensitive effect, and the real-time performance and convenience of a virus detection technology are improved.

Description

technical field [0001] The invention belongs to the technical field of biochemical sensing, and more specifically relates to a semiconductor sensor for virus detection and its preparation method and application. Background technique [0002] Rapid, accurate, and easy-to-popular virus detection technology is of great significance for early detection, early isolation, early diagnosis, and early treatment of virus-infected people. Take the SARS-CoV-2 novel coronavirus as an example, because of its strong infectivity, it has caused large-scale crowd infection events. At present, the detection methods of 2019-nCoV are mainly divided into direct detection methods for viral nucleic acid and indirect detection methods for human serum antibodies. Nucleic acid detection is one of the standard methods for the diagnosis of viral infection. It mainly obtains samples of upper respiratory tract secretions of patients through nasopharyngeal or oropharyngeal swabs, and uses real-time fluore...

Claims

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Application Information

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IPC IPC(8): G01N27/327G01N27/48G01N27/27G01N33/569G01N33/68
CPCG01N27/3277G01N27/48G01N27/27G01N33/6854G01N33/56983G01N2333/165
Inventor 刘欢陈建军李华曜胡志响赵雨农李龙苏虎音刘竞尧龙文博
Owner HUAZHONG UNIV OF SCI & TECH
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