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Diamond inclined mesa heterojunction diode and preparation method thereof

A diamond and heterojunction technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of insufficient activation of dopants, difficult growth of n-type diamond, and lack of efficient terminal structure of JBS/MPS structure devices System research and other issues to achieve the effect of alleviating the concentration of fringe electric field, improving the withstand voltage of the device, and good reverse off-state characteristics

Inactive Publication Date: 2020-10-02
SUN YAT SEN UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Another alternative dopant is phosphorus atom which forms a very deep donor level (about Ec-0.57eV) leading to insufficient activation of the dopant at room temperature
[0007] (2) Lack of systematic research on high-efficiency terminal structures of JBS / MPS structural devices
However, due to the difficulty of selective growth of n-type diamond, it has not been systematically studied in vertical conduction devices.

Method used

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  • Diamond inclined mesa heterojunction diode and preparation method thereof
  • Diamond inclined mesa heterojunction diode and preparation method thereof
  • Diamond inclined mesa heterojunction diode and preparation method thereof

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Embodiment 1

[0046] A diamond inclined mesa heterojunction diode structure of the present invention is as follows Figure 7 As shown, its structure includes ohmic contact electrode (7), low-resistance p-type diamond substrate (1), p-type diamond transition layer (2), diamond drift layer (3), and inclined mesa (4) from bottom to top. , groove structure (5), n-type gallium oxide layer (6), Schottky contact electrode (8).

[0047] The low-resistance p-type diamond substrate (1) is single crystal diamond or polycrystalline diamond, and the boron doping concentration is about 10 20 cm -3 .

[0048] The p-type diamond transition layer (2) can be a single-layer or multi-layer boron-doped diamond epitaxial layer, with a thickness of 10 nm to 50 μm, and a boron doping concentration of 10 15 ~10 20 cm -3 Adjust between ranges.

[0049] The diamond drift layer (3) can be a single-layer or multi-layer unintentionally doped diamond epitaxial layer, with a thickness of 10nm to 50μm, and a boron dopi...

Embodiment 2

[0053] The schematic diagram of the preparation method of a diamond inclined mesa heterojunction diode of the present invention is as follows Figure 1-7 shown, including the following steps:

[0054] S1, growing a p-type diamond transition layer (2) on a low-resistance p-type diamond single crystal substrate (1); figure 1 shown.

[0055] S2, grow unintentionally doped diamond drift layer (3) on p-type diamond transition layer (2); as figure 2 shown.

[0056] S3, using photoresist reflow etching on the surface of the diamond drift layer (3) to form an inclined mesa (4); as image 3 shown.

[0057] S4, utilizing oxygen plasma etching to form groove structure (5); Figure 4 shown.

[0058] S5, deposit and form an n-type gallium oxide layer (6) in the inclined mesa (4) and the groove structure (5); as Figure 5 shown.

[0059] S6, form the ohmic contact electrode (7) on the back side of the low-resistance p-type diamond single crystal substrate (1); as Figure 6 shown. ...

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Abstract

The invention discloses a diamond inclined mesa heterojunction diode and a preparation method thereof, and belongs to the technical field of semiconductor power devices. According to the structure, ap-type diamond transition layer (2), a diamond drift layer (3), an inclined table board (4), a groove structure (5), an n-type gallium oxide layer (6) and a Schottky contact electrode (8) are sequentially arranged on the front face of a low-resistance p-type diamond substrate (1), and an ohmic contact electrode (7) is arranged on the back face of the low-resistance p-type diamond substrate (1). According to the invention, the n-type gallium oxide is used for filling the groove to avoid the problem that the n-type doped diamond is formed in a selection region, and meanwhile, gallium oxide growson a table board with an optimized inclination angle to form a heterogeneous PN junction type mixed terminal structure, a PN junction at the terminal is conducted during forward bias to improve the current and surge resistance of a device, and a depletion region is formed during reverse bias to relieve the edge electric field concentration.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, and more specifically relates to a preparation method of a vertical conduction type heterojunction inclined mesa diamond hybrid PN / Schottky diode. Background technique [0002] The vertical conduction diamond device can increase the withstand voltage by changing the thickness of the drift layer while keeping the device size constant, and alleviate the early breakdown caused by the crowding effect of the gate edge electric field in the lateral device. The electric field peak position of the vertical device is far away from the device surface, which can effectively suppress the trap state and reduce the dynamic on-resistance. Current flow out in the longitudinal direction can withstand higher power densities compared to lateral devices. The electric field distribution is relatively more uniform, and the current distribution can be expanded, so that it has better heat dissipatio...

Claims

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Application Information

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IPC IPC(8): H01L29/861H01L29/872H01L29/267H01L21/04
CPCH01L21/0405H01L29/267H01L29/6603H01L29/8613H01L29/872
Inventor 李柳暗王启亮成绍恒李红东
Owner SUN YAT SEN UNIV
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