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Antiferroelectric material and preparation method thereof, and capacitor containing antiferroelectric material

An anti-ferroelectric and capacitor technology, applied in the field of anti-ferroelectric thick film capacitors, can solve the problems of reduced service life, few, destruction, etc., and achieve excellent energy storage performance, strong breakdown resistance, and high energy storage density. Effect

Pending Publication Date: 2020-09-29
INNER MONGOLIA UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Nowadays, many studies have shown that higher energy storage density has been generally achieved in dielectric energy storage materials, especially in lead zirconate-based antiferroelectric energy storage materials. The corresponding energy storage efficiency is unsatisfactory, and there are very few reports of energy storage efficiency exceeding 90%.
In the dielectric energy storage capacitor, the unavailable part of the energy, that is, the lost part of the energy storage efficiency, tends to be dissipated in the form of heat energy, and this part of the loss will cause thermal breakdown and destruction of the dielectric energy storage capacitor and cause Its service life is greatly reduced, burying hidden dangers for its safe use and long-term use
In view of the severe constraints between energy storage density and energy storage efficiency in dielectric energy storage materials, it is difficult to obtain the optimal value at the same time

Method used

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  • Antiferroelectric material and preparation method thereof, and capacitor containing antiferroelectric material
  • Antiferroelectric material and preparation method thereof, and capacitor containing antiferroelectric material
  • Antiferroelectric material and preparation method thereof, and capacitor containing antiferroelectric material

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Embodiment 1

[0053] The present embodiment provides an antiferroelectric thick film capacitor comprising (Pb 0.94 La 0.04 )(Zr 0.48 sn 0.45 Ti 0.07 )O 3 (abbreviation PLZST-1) represents the antiferroelectric material, the preparation method of this antiferroelectric rear film capacitor comprises the steps:

[0054] S1: Preparation of PLZST-1 casting powder;

[0055] S2: Preparation of PLZST-1 casting slurry and thick film; wherein, in the casting slurry, the mass fraction of PLZST-1 casting powder is 65%, the mass fraction of solvent ethanol / xylene is 20%, and the dispersion The mass fraction of the agent ethoxylate is 2%, the mass fraction of the binder polyvinyl alcohol is 7%, the mass fraction of the plasticizer dibenzoate is 4%, and the mass fraction of the homogenizer cyclohexanone is 2%. %;

[0056] S3: Preparation of PLZST-1 antiferroelectric thick film capacitor;

[0057] Step S1 specifically includes the following steps:

[0058] S101: According to the chemical formula (...

Embodiment 2

[0077] The present embodiment provides an antiferroelectric thick film capacitor comprising (Pb 0.94 La 0.04 )(Zr 0.67 sn 0.30 Ti 0.03 )O 3 (abbreviation PLZST-2) represents the antiferroelectric material, and the preparation method of this antiferroelectric rear film capacitor comprises the steps:

[0078] S1: Preparation of PLZST-2 casting powder;

[0079] S2: Preparation of PLZST-2 casting slurry and thick film; wherein, in the casting slurry, the mass fraction of PLZST-2 casting powder is 55%, the mass fraction of solvent toluene / ethanol is 30%, and the dispersant The mass fraction of herring fish oil is 1.5%, the mass fraction of binder ethyl cellulose is 6%, the mass fraction of plasticizer polyethylene glycol / phthalate is 5%, and the mass fraction of homogenizer cyclohexanone The mass fraction is 2.5%;

[0080] S3: Preparation of PLZST-2 antiferroelectric thick film capacitor;

[0081] Step S1 specifically includes the following steps:

[0082] S101: According ...

Embodiment 3

[0101] The present embodiment provides an antiferroelectric thick film capacitor comprising (Pb 0.94 La 0.04 )(Zr 0.49 sn 0.50 Ti 0.01 )O 3 (abbreviation PLZST-3) represents the antiferroelectric material, and the preparation method of this antiferroelectric rear film capacitor comprises the steps:

[0102] S1: Preparation of PLZST-3 casting powder;

[0103] S2: Preparation of PLZST-3 casting slurry and thick film; wherein, in the casting slurry, the mass fraction of PLZST-3 casting powder is 60%, the mass fraction of solvent toluene / ethanol is 30%, and the dispersant The mass fraction of tributyl phosphate is 1%, the mass fraction of binder polyvinyl butyral is 5%, the mass fraction of plasticizer polyethylene glycol / phthalate is 3%, and the homogenizer The massfraction of cyclohexanone is 1%;

[0104] S3: Preparation of PLZST-3 antiferroelectric thick film capacitor;

[0105] Step S1 specifically includes the following steps:

[0106] S101: According to the chemical...

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Abstract

The invention discloses an antiferroelectric material and a preparation method thereof, and a capacitor containing the antiferroelectric material. The antiferroelectric material includes an antiferroelectric body represented by a general formula (Pb<0.94>La<0.04>)(Zr<1-x-y>Sn<x>Ti<y>)O<3>, where x is greater than or equal to 0.3 and smaller than or equal to 0.5, and y is greater than or equal to 0.3 and smaller than or equal to 0.1. The antiferroelectric material can be used for manufacturing the energy storage capacitor. According to the lead lanthanum zirconate titanate stannate antiferroelectric thick-film capacitor prepared by a tape casting method disclosed by the invention, the ultrahigh energy storage efficiency of 90-95% can be achieved, and the capacitor also has relatively strongbreakdown resistance and high energy storage density, so a solid foundation is laid for researching and developing a dielectric energy storage capacitor with excellent energy storage performance; andthe capacitor has a very good application value.

Description

technical field [0001] The invention relates to the technical field of electronic materials, in particular to an antiferroelectric material, a preparation method thereof and a capacitor containing the same, in particular to an antiferroelectric thick film capacitor with ultra-high energy storage efficiency. Background technique [0002] In recent years, the development of electronic information products is changing with each passing day, and it is constantly developing towards miniaturization, light weight, integration and wearable direction; however, the accompanying energy crisis is also intensifying. In the face of such severe challenges, the development and utilization of new materials and new energy, as well as the improvement of new processes and technologies have become the focus of research in the academic and industrial circles. [0003] Nowadays, dielectric energy storage capacitors have attracted much attention as a research hotspot in energy storage technology. ...

Claims

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Application Information

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IPC IPC(8): C04B35/493H01G4/10H01G4/33
CPCC04B35/493H01G4/10H01G4/33C04B2235/3227C04B2235/3293
Inventor 郝喜红孟祥俊赵烨孙宁宁李雍
Owner INNER MONGOLIA UNIV OF SCI & TECH
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